XPS measurement of valence band discontinuity at GaP/GaN heterointerfaces

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 205-207

  Sato, Hisao ^a   Sarkar, Mihir Ranjan ^a,b   Naoi, Yoshiki ^a   Sakai, Shiro ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b Yamabishi Electric Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ENERGY GAP; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; X RAY PHOTOELECTRON SPECTROSCOPY;

VALENCE BAND DISCONTINUITY MEASUREMENT;

HETEROJUNCTIONS;

EID: 0031076048     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00167-0     Document Type: Article

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