Band alignment of Ga2O3/6H-SiC heterojunction

Chinese Physics B

Volumn 20, Issue 11, 2011, Pages

  Chang, Shao Hui ^a   Chen, Zhi Zhan ^a   Huang, Wei ^a   Liu, Xue Chao ^a   Chen, Bo Yuan ^a   Li, Zheng Zheng ^a   Shi, Er Wei ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

band alignment; Ga2O3 6H SiC; synchrotron radiation photoelectron spectroscopy

Indexed keywords

BAND ALIGNMENTS; CONDUCTION BAND OFFSET; ELECTRONIC DEVICE; ENERGY-BAND DIAGRAM; HETEROJUNCTION STRUCTURES; HIGH QUALITY; SIC SUBSTRATES; SYNCHROTRON RADIATION PHOTOELECTRON SPECTROSCOPY; VALENCE BAND OFFSETS;

ALIGNMENT; BINDING ENERGY; GALLIUM; GALLIUM ALLOYS; PHOTOELECTRON SPECTROSCOPY; PHOTONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SYNCHROTRON RADIATION; SYNCHROTRONS;

HETEROJUNCTIONS;

EID: 82155168526     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/20/11/116101     Document Type: Article

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