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Journal of Nanoscience and Nanotechnology

Volumn 12, Issue 10, 2012, Pages 7619-7627

Ferroelectric random access memories

(1) Ishiwara, Hiroshi a

a Konkuk University (South Korea)

Author keywords

BiFeO3.; FeFET; FeRAM; Ferroelectric; Memory; Pb(Zr,Ti)O3; SrBi 2Ta2O9

Indexed keywords

BIFEO3; FEFET; FERAM; PB(ZR , TI)O; SRBI 2TA2O9;

CAPACITORS; DATA STORAGE EQUIPMENT; ELECTRIC FIELDS; FERROELECTRIC DEVICES; FERROELECTRIC FILMS; FERROELECTRIC MATERIALS; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; LEAD; ZIRCONIUM;

RANDOM ACCESS STORAGE;

EID: 84870771196 PISSN: 15334880 EISSN: 15334899 Source Type: Journal
DOI: 10.1166/jnn.2012.6651 Document Type: Review

Times cited : (174)

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