Electrical properties of BiFeO3 doped PZT thin films for embedded FeRAM devices

Journal of the Korean Physical Society

Volumn 49, Issue SUPPL. 2, 2006, Pages

  Koo, Chang Young ^a   Cheon, Jong Hyeon ^a   Yeom, Jung Hoon ^a   Ha, Jowoong ^a   Kim, Seung Hyun ^a   Hong, Suk Kyoung ^b  

^a INOSTEK Inc   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

BiFeO3; Embedded FeRAM; Ferroelectrics; PZT thin film

Indexed keywords

EID: 33846411848     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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