Frequency-dependent electrical properties in Bi(Zn0.5Ti 0.5)O3 doped Pb(Zr0.4Ti0.6)O 3 thin film for ferroelectric memory application

Semiconductor Science and Technology

Volumn 25, Issue 3, 2010, Pages

  Tang, M H ^a,b   Dong, G J ^a   Sugiyama, Y ^c   Ishiwara, H ^b  

^a XIANGTAN UNIVERSITY   (China)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SOLUTION DEPOSITION; COERCIVE FIELD; DIELECTRIC CONSTANTS; DOMAIN SWITCH; ELECTRICAL PROPERTY; FERROELECTRIC MEMORY; FREQUENCY-DEPENDENT; LOSS TANGENT; PT(111); PZT; REMNANT POLARIZATIONS; SI(1 0 0);

DOPING (ADDITIVES); ELECTRIC FIELDS; HYSTERESIS; HYSTERESIS LOOPS; LEAD; PLATINUM; POLARIZATION; THIN FILMS; ZINC; ZIRCONIUM;

ELECTRIC PROPERTIES;

EID: 76649120587     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/3/035006     Document Type: Article

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