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Volumn 50, Issue 9-11, 2010, Pages 1731-1737

IGBT RBSOA non-destructive testing methods: Analysis and discussion

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK ANALYSIS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); TESTING;

EID: 80052916816     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.07.050     Document Type: Article
Times cited : (13)

References (8)
  • 2
    • 0025462660 scopus 로고
    • An 1800-V 300-A nondestructive tester for bipolar power transistors
    • G. Carpenter, F.C.Y. Lee, and D.Y. Chen An 1800-V 300-A nondestructive tester for bipolar power transistors IEEE Trans Power Electron 5 3 1990 314 322
    • (1990) IEEE Trans Power Electron , vol.5 , Issue.3 , pp. 314-322
    • Carpenter, G.1    Lee, F.C.Y.2    Chen, D.Y.3
  • 3
    • 0006661951 scopus 로고
    • A method for nondestructive testing of bipolar transistors, IGBTs and MOSFETs
    • Reinmuth K. A method for nondestructive testing of bipolar transistors, IGBTs and MOSFETs. In: EPE-MADEP '91; 1991. p. 142-7.
    • (1991) EPE-MADEP , vol.91 , pp. 142-147
    • Reinmuth, K.1
  • 4
    • 84885541949 scopus 로고
    • Non-destructive RBSOA characterization of IGBT's and MCT's
    • D.Y. Chen, F.C. Lee, and G. Carpenter Non-destructive RBSOA characterization of IGBT's and MCT's IEEE Trans Power Electron 10 3 1995 368 372
    • (1995) IEEE Trans Power Electron , vol.10 , Issue.3 , pp. 368-372
    • Chen, D.Y.1    Lee, F.C.2    Carpenter, G.3
  • 6
    • 84991236055 scopus 로고    scopus 로고
    • Non-destructive experimental investigation about RBSOA in high power IGBT modules
    • Nuremberg, Germany, 11-13 March 2008
    • Busatto G, Abbate C, Abbate B, Iannuzzo F. Non-destructive experimental investigation about RBSOA in high power IGBT modules. In: Proc of CIPS 2008, Nuremberg, Germany, 11-13 March 2008.
    • (2008) Proc of CIPS
    • Busatto, G.1    Abbate, C.2    Abbate, B.3    Iannuzzo, F.4
  • 8
    • 69249221298 scopus 로고    scopus 로고
    • Instable mechanisms during unclamped operation of high power IGBT modules
    • G. Busatto, C. Abbate, F. Iannuzzo, and P. Cristofaro Instable mechanisms during unclamped operation of high power IGBT modules Microelectron Reliab 49 2009 1363 1369
    • (2009) Microelectron Reliab , vol.49 , pp. 1363-1369
    • Busatto, G.1    Abbate, C.2    Iannuzzo, F.3    Cristofaro, P.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.