Investigation of power MOSFETs for high temperature operation

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 1, Issue , 2005, Pages 388-392

  Wang, H ^a   Wang, F ^a   Huang, A Q ^b   Tipton, C W ^c  

^a Virginia Polytechnic Institute and State University   (United States)

^b North Carolina State University   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC CONVERTERS; ELECTRIC SWITCHES; HIGH TEMPERATURE OPERATIONS; LEAKAGE CURRENTS; LIMITERS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; THERMODYNAMIC STABILITY;

CONVERTER SYSTEM DESIGN; HIGH FREQUENCY APPLICATION; THERMAL LIMITATIONS; WIDEBAND GAP DEVICES;

MOSFET DEVICES;

EID: 33745888717     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IAS.2005.1518337     Document Type: Conference Paper

References (9)

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