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Volumn 90, Issue 7, 2003, Pages 4-

Mechanisms of Diffusion of Boron Impurities in [Formula presented]

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EID: 85038334375     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.90.075901     Document Type: Article
Times cited : (4)

References (33)
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    • Some models for B diffusion in (Formula presented) is proposed by compiling thermochemical data: R.B. Fair, J. Electrochem. Soc. 144, 708 (1997).
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    • Fair, R.B.1
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    • Codes used in the present work are based on Tokyo Ab initio Program Package (TAPP) developed by us; see J. Yamauchi, M. Tsukada, S. Watanabe, and O. Sugino, Phys. Rev. B10.1103/PhysRevB.54.5586 54, 5586 (1996);
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    • The experimental barrier for the B diffusion scatters between 2–3�eV. See, e.g., T. Aoyama, H. Tashiro, and K. Suzuki, J. Electrochem. Soc.10.1149/1.1391859 146, 1879 (1999), and references therein.
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    • Aoyama, T.1    Tashiro, H.2    Suzuki, K.3


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