Atomic and electronic structures of N-incorporated Si oxides

Physical Review Letters

Volumn 86, Issue 16, 2001, Pages 3574-3577

  Jeong, Sukmin ^a   Oshiyama, Atsushi ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; ENERGY GAP; LEAKAGE CURRENTS; NUMERICAL METHODS; PROBABILITY DENSITY FUNCTION;

CHARGE STATES; DENSITY FUNCTIONAL THEORY; ELECTRICAL RELIABILITY; ENERGETICS; GENERALIZED GRADIENT APPROXIMATION; SILICON OXYNITRIDE;

SILICA;

EID: 0035896825     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.3574     Document Type: Article

References (38)