Surface chemistry, structure, and electronic properties from microns to the atomic scale of axially doped semiconductor nanowires

ACS Nano

Volumn 6, Issue 11, 2012, Pages 9679-9689

  Hjort, Martin ^a   Wallentin, Jesper ^a   Timm, Rainer ^a   Zakharov, Alexei A ^b   Håkanson, Ulf ^a   Andersen, Jesper N ^a,b   Lundgren, Edvin ^a   Samuelson, Lars ^a   Borgström, Magnus T ^a   Mikkelsen, Anders ^a  

^a LUND UNIVERSITY   (Sweden)

^b LUND UNIVERSITY   (Sweden)

Author keywords

III V; nanowires; oxide; PEEM; STM; surface; XPS

Indexed keywords

AMBIENT AIR; ATOMIC HYDROGEN; ATOMIC LAYER; ATOMIC SCALE; ELEVATED TEMPERATURE; ENERGY DIAGRAM; III-V; INP; LENGTH SCALE; MOLECULAR ADSORBATE; NANOSCALE DEVICE; NANOWIRE SURFACE; NATIVE OXIDES; OXIDIZED SURFACES; P-N JUNCTION; PEEM; PHOTOEMISSION ELECTRON MICROSCOPY; QUANTITATIVE VALUES; SEMICONDUCTOR NANOWIRE; STM; SULFUR MOLECULE; SURFACE CHEMICAL COMPOSITION; SURFACE OXIDE;

ATOMS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GERMANIUM; HYDROGEN; OXIDES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SULFUR; SURFACE CHEMISTRY; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

NANOWIRES;

INDIUM; INDIUM PHOSPHIDE; NANOTUBE; PHOSPHINE DERIVATIVE;

ARTICLE; CHEMISTRY; CONFORMATION; ELECTRIC CONDUCTIVITY; MACROMOLECULE; MATERIALS TESTING; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

ELECTRIC CONDUCTIVITY; INDIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTUBES; PARTICLE SIZE; PHOSPHINES; SEMICONDUCTORS; SURFACE PROPERTIES;

EID: 84870410287     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn303107g     Document Type: Article

References (52)

1. Wallentin, J.; Borgström, M. T. Doping of Semiconductor Nanowires J. Mater. Res. 2011, 26, 2142-2156
2. van Weert, M. H. M.; Helman, A.; van den Einden, W.; Algra, R. E.; Verheijen, M. A.; Borgström, M. T.; Immink, G.; Kelly, J. J.; Kouwenhoven, L. P.; Bakkers, E. P. A. M. Zinc Incorporation via the Vapor-Liquid-Solid Mechanism into InP Nanowires J. Am. Chem. Soc. 2009, 131, 4578-4579
3. Perea, D. E.; Hemesath, E. R.; Schwalbach, E. J.; Lensch-Falk, J. L.; Voorhees, P. W.; Lauhon, L. J. Direct Measurement of Dopant Distribution in an Individual Vapour-Liquid-Solid Nanowire Nat. Nanotechnol. 2009, 4, 315-319
4. Wang, D.; Chang, Y.-L.; Wang, Q.; Cao, J.; Farmer, D. B.; Gordon, R. G.; Dai, H. Surface Chemistry and Electrical Properties of Germanium Nanowires J. Am. Chem. Soc. 2004, 126, 11602-11611
5. 2 Thin Films Appl. Phys. Lett. 2011, 99, 222907
6. Cui, Y.; Lieber, C. M. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks Science 2001, 291, 851-853
7. Law, M.; Goldberger, J.; Yang, P. D. Semiconductor Nanowires and Nanotubes Annu. Rev. Mater. Res. 2004, 34, 83-122
8. Borgström, M. T.; Wallentin, J.; Heurlin, M.; Fält, S.; Wickert, P.; Leene, J.; Magnusson, M. H.; Deppert, K.; Samuelson, L. Nanowires With Promise for Photovoltaics IEEE J. Sel. Top. Quantum Electron. 2011, 17, 1050-1061
9. Svensson, C. P. T.; Märtensson, T.; Trögärdh, J.; Larsson, C.; Rask, M.; Hessman, D.; Samuelson, L.; Olsson, J. Monolithic GaAs/InGaP Nanowire Light Emitting Diodes on Silicon Nanotechnology 2008, 19, 305201
10. Duan, X. F.; Huang, Y.; Cui, Y.; Wang, J. F.; Lieber, C. M. Indium Phosphide Nanowires as Building Blocks for Nanoscale Electronic and Optoelectronic Devices Nature 2001, 409, 66-69
11. Garnett, E. C.; Tseng, Y.-C.; Khanal, D. R.; Wu, J.; Bokor, J.; Yang, P. Dopant Profiling and Surface Analysis of Silicon Nanowires Using Capacitance-Voltage Measurements Nat. Nanotechnol. 2009, 4, 311-314
12. Zhang, S.; Hemesath, E. R.; Perea, D. E.; Wijaya, E.; Lensch-Falk, J. L.; Lauhon, L. J. Relative Influence of Surface States and Bulk Impurities on the Electrical Properties of Ge Nanowires Nano Lett. 2009, 9, 3268-3274
13. Ouattara, L.; Mikkelsen, A.; Sköld, N.; Eriksson, J.; Knaapen, T.; Cavar, E.; Seifert, W.; Samuelson, L.; Lundgren, E. GaAs/AlGaAs Nanowire Heterostructures Studied by Scanning Tunneling Microscopy Nano Lett. 2007, 7, 2859-2864
14. Lüth, H. Surfaces and Interfaces of Solids; Springer-Verlag: Berlin, 1993.
15. Soci, C.; Zhang, A.; Xiang, B.; Dayeh, S. A.; Aplin, D. P. R.; Park, J.; Bao, X. Y.; Lo, Y. H.; Wang, D. ZnO Nanowire UV Photodetectors with High Internal Gain Nano Lett. 2007, 7, 1003-1009
16. Xu, T.; Dick, K. A.; Plissard, S.; Nguyen, T. H.; Makoudi, Y.; Berthe, M.; Nys, J. P.; Wallart, X.; Grandidier, B.; Caroff, P. Faceting, Composition and Crystal Phase Evolution in III-V Antimonide Nanowire Heterostructures Revealed by Combining Microscopy Techniques. Nanotechnology 2012, DOI: 10.1088/0957-4484/23/9/095702.
17. Hilner, E.; Häkanson, U.; Fröberg, L. E.; Karlsson, M.; Kratzer, P.; Lundgren, E.; Samuelson, L.; Mikkelsen, A. Direct Atomic Scale Imaging of III-V Nanowire Surfaces Nano Lett. 2008, 8, 3978-3982
18. Allen, J. E.; Perea, D. E.; Hemesath, E. R.; Lauhon, L. J. Nonuniform Nanowire Doping Profiles Revealed by Quantitative Scanning Photocurrent Microscopy Adv. Mater. 2009, 21, 3067
19. Leonard, F.; Talin, A. A. Electrical Contacts to One- and Two-Dimensional Nanomaterials Nat. Nanotechnol. 2011, 6, 773-783
20. den Hertog, M. I.; Schmid, H.; Cooper, D.; Rouviere, J.-L.; Björk, M. T.; Riel, H.; Rivallin, P.; Karg, S.; Riess, W. Mapping Active Dopants in Single Silicon Nanowires Using Off-Axis Electron Holography Nano Lett. 2009, 9, 3837-3843
21. x Treatment on the Surface of III-V Compound Semiconductors Jpn. J. Appl. Phys., Part 2 1991, 30, L322-L325
22. Eymery, J.; Favre-Nicolin, V.; Fröberg, L.; Samuelson, L. X-ray Measurements of the Strain and Shape of Dielectric/Metallic Wrap-Gated InAs Nanowires Appl. Phys. Lett. 2009, 94, 131911
23. Wallentin, J.; Persson, J. M.; Wagner, J. B.; Samuelson, L.; Deppert, K.; Borgström, M. T. High-Performance Single Nanowire Tunnel Diodes Nano Lett. 2010, 10, 974-979
24. Losurdo, M.; Capezzuto, P.; Bruno, G. Study of the H2 Remote Plasma Cleaning of InP Substrate for Epitaxial Growth J. Vac. Sci. Technol., B 1996, 14, 691-697
25. Gallet, D.; Hollinger, G.; Santinelli, C.; Goldstein, L. In Situ Characterization of InP Surfaces after Low-Energy Hydrogen Ion Cleaning J. Vac. Sci. Technol., B 1992, 10, 1267-1272
26. Bertness, K. A.; Kendelewicz, T.; List, R. S.; Williams, M. D.; Lindau, I.; Spicer, W. E. Fermi Level Pinning During Oxidation of Atomically Clean n-InP(110) J. Vac. Sci. Technol., A 1986, 4, 1424-1426
27. Hollinger, G.; Bergignat, E.; Joseph, J.; Robach, Y. On the Nature of Oxides on InP Surfaces J. Vac. Sci. Technol., A 1985, 3, 2082-2088
28. 2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels J. Electrochem. Soc. 1979, 126, 1516-1522
29. Borgström, M. T.; Norberg, E.; Wickert, P.; Nilsson, H. A.; Trägärdh, J.; Dick, K. A.; Statkute, G.; Ramvall, P.; Deppert, K.; Samuelson, L. Precursor Evaluation for In Situ InP Nanowire Doping Nanotechnology 2008, 19, 445602
30. Kuphal, E. Preparation and Characterization of LPE InP J. Cryst. Growth 1981, 54, 117-126
31. Algra, R. E.; Verheijen, M. A.; Borgström, M. T.; Feiner, L. F.; Immink, G.; van Enckevort, W. J. P.; Vlieg, E.; Bakkers, E. P. A. M. Twinning Superlattices in Indium Phosphide Nanowires Nature 2008, 456, 369-372
32. Kamiya, I.; Aspnes, D. E.; Florez, L. T.; Harbison, J. P. Reflectance-Difference Spectroscopy of (001) GaAs Surfaces in Ultrahigh Vacuum Phys. Rev. B 1992, 46, 15894-15904
33. Schmidt, W. G. III-V Compound Semiconductor (001) Surfaces Appl. Phys. A: Mater. Sci. Process. 2002, 75, 89
34. Hilner, E.; Lundgren, E.; Mikkelsen, A. Surface Structure and Morphology of InAs(111)B with/without Gold Nanoparticles Annealed under Arsenic or Atomic Hydrogen Flux Surf. Sci. 2010, 604, 354-360
35. Hilner, E.; Mikkelsen, A.; Eriksson, J.; Andersen, J. N.; Lundgren, E.; Zakharov, A.; Yi, H.; Kratzer, P. Au Wetting and Nanoparticle Stability on GaAs(111)B Appl. Phys. Lett. 2006, 89, 251912
36. Feenstra, R. M. Tunneling Spectroscopy of the (110)-Surface of Direct-Gap III-V Semiconductors Phys. Rev. B 1994, 50, 4561-4570
37. Pavesi, L.; Piazza, F.; Rudra, A.; Carlin, J. F.; Ilegems, M. Temperature Dependence of the InP Band Gap from a Photoluminescence Study Phys. Rev. B 1991, 44, 9052-9055
38. Tuin, G.; Borgström, M.; Trägårdh, J.; Ek, M.; Wallenberg, L.; Samuelson, L.; Pistol, M.-E. Valence Band Splitting in Wurtzite InP Nanowires Observed by Photoluminescence and Photoluminescence Excitation Spectroscopy Nano Res. 2011, 4, 159-163
39. Feenstra, R. M.; Lee, J. Y.; Kang, M. H.; Meyer, G.; Rieder, K. H. Band Gap of the Ge(111)c(2 ×8) Surface by Scanning Tunneling Spectroscopy Phys. Rev. B 2006, 73, 035310
40. Timm, R.; Feenstra, R. M.; Eisele, H.; Lenz, A.; Ivanova, L.; Lenz, E.; Dahne, M. Contrast Mechanisms in Cross-Sectional Scanning Tunneling Microscopy of GaSb/GaAs Type-II Nanostructures J. Appl. Phys. 2009, 105, 093718
41. Feenstra, R. M.; Gaan, S.; Meyer, G.; Rieder, K. H. Low-Temperature Tunneling Spectroscopy of Ge(111)c(2 ×8) Surfaces Phys. Rev. B 2005, 71, 125316
42. Hansson, G. V.; Uhrberg, R. I. G. Photoelectron Spectroscopy of Surface States on Semiconductor Surfaces Surf. Sci. Rep. 1988, 9, 197-292
43. Hjort, M.; Wallentin, J.; Timm, R.; Zakharov, A. A.; Andersen, J. N.; Samuelson, L.; Borgström, M. T.; Mikkelsen, A. Doping Profile of InP Nanowires Directly Imaged by Photoemission Electron Microscopy Appl. Phys. Lett. 2011, 99, 233113
44. Chung, S.; Johnson, S. R.; Zhang, Y.-H.; Smith, D. J.; McCartney, M. R. Off-Axis Electron Holographic Potential Mapping Across AlGaAs/AlAs/GaAs Heterostructures J. Appl. Phys. 2009, 105, 014910
45. Cooper, D.; Truche, R.; Twitchett-Harrison, A. C.; Dunin-Borkowski, R. E.; Midgley, P. A. Quantitative Off-Axis Electron Holography of GaAs p-n Junctions Prepared by Focused Ion Beam Milling J. Microsc. 2009, 233, 102-113
46. Sealy, C. P.; Castell, M. R.; Wilshaw, P. R. Mechanism for Secondary Electron Dopant Contrast in the SEM J. Electron Microsc. 2000, 49, 311-321
47. Frigeri, C.; Ferrari, C.; Fornari, R.; Weyher, J. L.; Longo, F.; Guadalupi, G. M. Structural Characterization of Heavily Zn-Doped Liquid Encapsulated Czochralski InP Mater. Sci. Eng., B 1994, 28, 120-125
48. Elrod, U.; Luxsteiner, M. C.; Obergfell, M.; Bucher, E.; Schlapbach, L. Surface-Chemistry of Zn3P3 Single-Crystals Studied by XPS Appl. Phys. B 1987, 43, 197-201
49. Takeuchi, K.; Suda, A.; Ushioda, S. Local Variation of the Work Function of Cu(1;1;1) Surface Deduced from the Low Energy Photoemission Spectra Surf. Sci. 2001, 489, 100-106
50. Borgström, M. T.; Wallentin, J.; Trägärdh, J.; Ramvall, P.; Ek, M.; Wallenberg, L. R.; Samuelson, L.; Deppert, K. In Situ Etching for Total Control over Axial and Radial Nanowire Growth Nano Res. 2010, 3, 264-270
51. Kazemian, P.; Mentink, S. A. M.; Rodenburg, C.; Humphreys, C. J. High Resolution Quantitative Two-Dimensional Dopant Mapping Using Energy-Filtered Secondary Electron Imaging J. Appl. Phys. 2006, 100, 054901
52. Märtensson, P.; Feenstra, R. M. Geometric and Electronic-Structure of Antimony on the GaAs(110) Surface Studied by Scanning Tunneling Microscopy Phys. Rev. B 1989, 39, 7744-7753