Contrast mechanisms in cross-sectional scanning tunneling microscopy of GaSb/GaAs type-II nanostructures

Journal of Applied Physics

Volumn 105, Issue 9, 2009, Pages

  Timm, R ^a   Feenstra, R M ^b   Eisele, H ^a   Lenz, A ^a   Ivanova, L ^a   Lenz, E ^a   Dahne M ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; BANDBENDING; CONTRAST MECHANISM; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; GAAS; GASB/GAAS; HETEROSTRUCTURES; NEGATIVE SAMPLE BIAS; NUMERICAL SIMULATION; QUANTUM WELL; SAMPLE BIAS; TIP-INDUCED; TUNNEL CURRENTS;

GALLIUM ALLOYS; NANOSTRUCTURES; SCANNING; SEMICONDUCTOR QUANTUM DOTS;

SCANNING TUNNELING MICROSCOPY;

EID: 67249139718     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3117492     Document Type: Article

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