Interface composition of InAs nanowires with Al2O3 and HfO2 thin films

Applied Physics Letters

Volumn 99, Issue 22, 2011, Pages

  Timm, R ^a   Hjort, M ^a   Fian, A ^a,b   Borg, B M ^a   Thelander, C ^a   Andersen, J N ^a   Wernersson, L E ^a   Mikkelsen, A ^a  

^a LUND UNIVERSITY   (Sweden)

^b JOANNEUM RESEARCH   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL COMPOSITIONS; DIELECTRIC LAYER; HIGH-SPEED; INAS; INTERFACE COMPOSITION; INTERFACE LAYER; METAL OXIDE SEMICONDUCTOR; NATIVE OXIDES; OXIDE REDUCTION;

HAFNIUM OXIDES; INDIUM ARSENIDE; MOS DEVICES; NANOWIRES; SEMICONDUCTOR DEVICES;

OXIDE FILMS;

EID: 82955194686     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3664399     Document Type: Article

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20. See supplementary material at http://dx.doi.org/10.1063/1.3664399 E-APPLAB-99-097148 for details in photoelectron spectroscopy on InAs covered by an oxide layer, the signal gets attenuated when the photoelectrons from the InAs travel through the oxide, depending on the sample geometry. This supplementary material provides a simple geometrical model and calculations to evaluate the attenuation of the XPS signal for an InAs nanowire compared with a planar substrate.