Improved conversion efficiency of textured InGaN solar cells with interdigitated imbedded electrodes

IEEE Electron Device Letters

Volumn 31, Issue 6, 2010, Pages 585-587

  Horng, Ray Hua ^a   Chu, Mu Tao ^b   Chen, Hung Ruei ^b   Liao, Wen Yih ^c   Wu, Ming Hsien ^c   Chen, Kuo Feng ^d   Wuu, Dong Sing ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^d NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

Author keywords

Electrode shading; Interdigitated imbedded electrodes (IIEs); N GaN i InGaN p GaN solar cell; Textured.

Indexed keywords

INTERDIGITATED IMBEDDED ELECTRODES (IIES); N-GAN/I-INGAN/P-GAN SOLAR CELL; SHADING EFFECT; SILICON SUBSTRATES;

CONVERSION EFFICIENCY; ELECTRODES; GALLIUM ALLOYS; GALLIUM NITRIDE; SWITCHING CIRCUITS;

SOLAR CELLS;

EID: 77953588109     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2046615     Document Type: Article

References (11)

1. A. De Vos, Endoreversible Thermodynamics of Solar Energy Conversion. Oxford, U.K.: Oxford Univ. Press, 1992.
2. A. Barnett, D. Kirkpatrick, C. Honsberg, D. Moore, M. Wanlass, K. Emery, R. Schwartz, D. Carlson, S. Bowden, D. Aiken, A. Gray, S. Kurtz, L. Kazmerski, T. Moriarty, M. Steiner, J. Gray, T. Davenport, R. Buelow, L. Takacs, N. Shatz, J. Bortz, O. Jani, K. Goossen, F. Kiamilev, A. Doolittle, I. Ferguson, B. Unger, G. Schmidt, E. Christensen, and D. Salzman, "Milestones toward 50% efficient solar cell modules," in Proc. 22nd Eur. PV Solar Energy Conf., Milan, Italy, Sep. 2007.
3. J.-K. Sheu, C.-C. Yang, S.-J. Tu, K.-H. Chang, M.-L. Lee, W.-C. Lai, and L.-C. Peng, "Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers," IEEE Electron Device Lett., vol.30, no.3, pp. 225-227, Mar. 2009.
4. B. R. Jampana, A. G. Melton, M. Jamil, N. N. Faleev, R. L. Opila, I. T. Ferguson, and C. B. Honsberg, "Design and realization of wide-band-gap(∼2.67 eV) InGaN p-n junction solar cell," IEEE Electron Device Lett., vol.31, no.1, pp. 32-34, Jan. 2010.
5. B. Beaumont, P. Vennegues, and P. Gibart, "Epitaxial lateral overgrowth of GaN," Phys. Stat. Sol.(B), vol.227, no.1, pp. 1-43, Sep. 2001.
6. A. Usui, H. Sunakawa, K. Kobayashi, H. Watanabe, and M. Mizuta, "Characteristics of FIELO-GaN grown by hydride vapor phase epitaxy," in Proc. Mater. Res. Soc. Symp., Nov. 2001, vol.639, pp. G5.6.1-G5.6.10.
7. T. S. Zheleva, S. A. Smith, D. B. Thomson, K. J. Linthicum, P. Rajagopal, and R. P. Davis, "Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films," J. Electron. Mater., vol.28, no.4, pp. L5-L8, Apr. 1999.
8. K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, T. Jyouichi, Y. Imada, M. Kato, H. Kudo, and T. Taguchi, "High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy," Phys. Stat. Sol.(A), vol.188, no.1, pp. 121-125, Nov. 2001. (Pubitemid 33700883)
9. X. Zheng, R. H. Horng, D. S. Wuu, M. T. Chu, W. Y. Liao, M. H. Wu, R. M. Lin, and Y. C. Lu, "High-quality InGaN/GaN heterojunctions and their photovoltaic effects," Appl. Phys. Lett., vol.93, no.26, pp. 261 108-1-261 108-3, Dec. 2008.
10. R. H. Horng, S. T. Lin, Y. L. Tsai, M. T. Chu, W. Y. Liao, M. H. Wu, R. M. Lin, and Y. C. Lu, "Improved conversion efficiency of GaN/InGaN thin-film solar cells," IEEE Electron Device Lett., vol.30, no.7, pp. 724-726, Jul. 2009.
11. C. H. Qiu, C. Hoggatt, W. Melton, M. W. Leksono, and J. I. Pankove, "Study of defect states in GaN films by photoconductivity measurement," Appl. Phys. Lett., vol.66, no.20, pp. 2712-2714, May 1995.