Substantial photo-response of InGaN p-i-n homojunction solar cells

Semiconductor Science and Technology

Volumn 24, Issue 5, 2009, Pages

  Zeng, S W ^a   Zhang, B P ^a   Sun, J W ^a   Cai, J F ^a   Chen, C ^a   Yu, J Z ^a,b  

^a XIAMEN UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EXTERNAL QUANTUM EFFICIENCY; FILL FACTOR; HIGH-CRYSTALLINE QUALITY; HOMOJUNCTION; METALORGANIC CHEMICAL VAPOR DEPOSITION; OPEN-CIRCUIT VOLTAGES; P-CONTACTS; PHOTORESPONSES; POWER DENSITIES; X-RAY DIFFRACTION MEASUREMENTS;

CELL MEMBRANES; ELECTRIC POTENTIAL; EPITAXIAL LAYERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; PHOTOVOLTAIC CELLS; SOLAR CELLS; STRUCTURAL METALS;

SOLAR ENERGY;

EID: 68849118422     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/5/055009     Document Type: Article

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