Demonstration and study of Photovoltaic performances of InGaN p-i-n homojunction solar cells

IEEE Journal of Quantum Electronics

Volumn 46, Issue 5, 2010, Pages 783-787

  Zeng, Sheng Wei ^a   Cai, Xiao Mei ^a   Zhang, Bao Ping ^a  

^a XIAMEN UNIVERSITY   (China)

Author keywords

Homojunction; InGaN; Solar cell

Indexed keywords

CURRENT-VOLTAGE EQUATIONS; EXTERNAL QUANTUM EFFICIENCY; FILL FACTOR; HOMOJUNCTION; III-NITRIDES; NEGATIVE IMPACTS; PHOTOVOLTAIC PERFORMANCE; REVERSE CURRENTS; V-SHAPED DEFECTS; XE LAMP;

ATOMIC FORCE MICROSCOPY; CELLS; LEAKAGE (FLUID); LEAKAGE CURRENTS; NITRIDES; OPEN CIRCUIT VOLTAGE; SOLAR CELLS; SOLAR POWER GENERATION; SWITCHING CIRCUITS; XENON;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77749307399     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2009.2039197     Document Type: Article

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