Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires

Nanotechnology

Volumn 23, Issue 48, 2012, Pages

  Wu, Di ^a   Jiang, Yang ^a   Yu, Yongqiang ^a   Zhang, Yugang ^a   Li, Guohua ^a   Zhu, Zhifeng ^a   Wu, Chunyan ^a   Wang, Li ^a   Luo, Linbao ^a   Jie, Jiansheng ^b  

^a HEFEI UNIVERSITY OF TECHNOLOGY   (China)

^b SOOCHOW UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CDSE; CONTACT ELECTRODES; DE-TRAPPING; ELECTRON TRAPPING; FOUR-ORDER; GA-DOPED; INTERFACIAL OXIDE LAYERS; MULTI-BITS; NON-VOLATILE; ON/OFF RATIO; ONE-DIMENSIONAL NANOMATERIALS; OPERATING VOLTAGE; PROCESSING TECHNIQUE; RESISTIVE SWITCHING; RETENTION TIME; SCHOTTKY; SCHOTTKY CONTACTS; SCHOTTKY DEVICES; TEREPHTHALATE;

CADMIUM COMPOUNDS; NANOWIRES; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SWITCHING SYSTEMS;

CADMIUM ALLOYS;

EID: 84869060790     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/48/485203     Document Type: Article

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