Nonvolatile memory effect in a Au/Cu-ZnO/p-Si type of metal-insulator- semiconductor structure

IEEE Electron Device Letters

Volumn 32, Issue 12, 2011, Pages 1746-1748

  Ghosh, T ^a   Basak, D ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

Charge trapping; Cu doped ZnO (Cu ZnO); Metal insulator semiconductor (MIS); Nonvolatile memory effect; Sol gel

Indexed keywords

CAPACITANCE VALUES; CAPACITANCE-VOLTAGE PLOTS; CU-DOPED ZNO; CU-DOPED ZNO (CU-ZNO); DE-TRAPPING; ELECTRON TRAPPING; MEMORY EFFECTS; METAL INSULATORS; METAL-INSULATOR-SEMICONDUCTORS; MIS STRUCTURE; NON-VOLATILE MEMORIES; SEMICONDUCTOR STRUCTURE; TRAP STATE;

CAPACITANCE; CHARGE TRAPPING; COPPER; HYSTERESIS; HYSTERESIS LOOPS; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SOL-GELS; ZINC OXIDE;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 81855183807     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2169231     Document Type: Article

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