Construction of high-quality CdS:Ga nanoribbon/silicon heterojunctions and their nano-optoelectronic applications

Nanotechnology

Volumn 22, Issue 40, 2011, Pages

  Wu, Di ^a   Jiang, Yang ^a   Li, Shanying ^a,b   Li, Fangze ^a   Li, Junwei ^a   Lan, Xinzheng ^a   Zhang, Yugang ^a   Wu, Chunyan ^a   Luo, Linbao ^a   Jie, Jiansheng ^a  

^a HEFEI UNIVERSITY OF TECHNOLOGY   (China)

^b HENAN UNIVERSITY OF URBAN CONSTRUCTION   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CDS; CDS NANORIBBON; DEVICE PERFORMANCE; FAST RESPONSE; FUTURE APPLICATIONS; HETEROJUNCTION STRUCTURES; HIGH QUALITY; HIGH STABILITY; N-TYPE CONDUCTIVITY; NANORIBBONS; OPTOELECTRONIC MATERIALS; OPTOELECTRONIC PROPERTIES; PHOTOVOLTAIC DEVICES; SI-BASED OPTOELECTRONICS; SILICON BASED OPTOELECTRONICS;

CADMIUM COMPOUNDS; CADMIUM SULFIDE; GALLIUM; LIGHT EMITTING DIODES; OPTOELECTRONIC DEVICES; PHOTOVOLTAIC EFFECTS;

HETEROJUNCTIONS;

EID: 80052955271     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/40/405201     Document Type: Article

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