Electrical characterization of mis structures with sol-gel TiO 2(La) dielectric films

Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 1, 2005, Pages 545-548

  Simeonov, S ^a   Kafedjiiska, E ^a   Szekeres, A ^a   Parlog, C ^b   Gartaer, M ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b INSTITUTE OF PHYSICAL CHEMISTRY   (Romania)

Author keywords

Electrical characteristics; Electron transport mechanism; Sol gel deposition; Titanium oxide

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; HEAT TREATMENT; LANTHANUM; LEAKAGE CURRENTS; MOS DEVICES; PERMITTIVITY; SOL-GELS; TITANIUM OXIDES;

ELECTRICAL CHARACTERISTICS; LCR METERS; MIS STRUCTURES; TRAP-ASSISTED TUNNELING;

MIS DEVICES;

EID: 15244344863     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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