InGaN/GaN resonant-cavity LED including an AlInN/GaN Bragg mirror

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 12, 2004, Pages 2675-2678

  Dorsaz, J ^a   Carlin, J F ^a   Zellweger, C M ^a   Gradecak, S ^a   Ilegems, M ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM EFFICIENCY; REFRACTIVE INDEX; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; LIGHT EMITTING DIODES; MIRRORS; SOLID STATE LASERS;

BRAGG MIRRORS; DISTRIBUTED BRAGG REFLECTORS (DBR); OPTICAL STOPBAND; RESONANT-CAVITY LIGHT EMITTING DIODE (RCLED); LATTICE MISMATCH; RESONANT-CAVITY LIGHT-EMITTING DIODES (RCLED); VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

LIGHT EMITTING DIODES; GALLIUM NITRIDE;

EID: 6344267108     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200405042     Document Type: Conference Paper

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