Nanoscale EELS analysis of elemental distribution and band-gap properties in AlGaN epitaxial layers

Journal of Physics: Conference Series

Volumn 326, Issue 1, 2011, Pages

  Amari, H ^a   Zhang, H Y ^a   Geelhaar, L ^b   Cheze C ^b   Kappers, M J ^c   Walther, T ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ENERGY DISSIPATION; ENERGY GAP; NITRIDES; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES;

BAND GAP ENGINEERING; BANDGAP PROPERTIES; ELEMENTAL DISTRIBUTION; HIGH TEMPERATURE ELECTRONIC DEVICES; LOCAL MEASUREMENT; NITRIDE LAYERS; SHORT WAVELENGTHS; VISIBLE AND ULTRAVIOLET;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 82955251103     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/326/1/012039     Document Type: Conference Paper

References (9)

1. Riechert H et al 1997 Mater. Res. Soc. Symp. Proc. 449 149
2. Chang TY et al 2010 J. Appl. Pkys. 108 123522
3. Egerton RF 1996 EELS in the Electron Microscope (Plenum, New York) p 304
4. Walther T and Mader W 1999 Microsc. Semicond. Mater. Conf., Oxford Inst. Phys. Conf. Ser. vol 164 p 121
5. Gass M et al 2004 Appl. Phys. Lett. 84 1453
6. Gu L et al 2007 Phys. Rev. B 75 195214
7. Festenberg CV 1969 Z. Phys. 227 453
8. Schubert EF 2006 Light-Emitting Diodes 2nd edn (Cambridge University Press)
9. Zhang X et al 1995 Appl. Phys. Lett. 67 1745