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Volumn 4, Issue 4, 2011, Pages

Growth, structural, and electrical characterizations of N-polar inaln by plasma-assisted molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL CHARACTERIZATION; GAN HEMTS; LATTICE-MATCHED; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

EPITAXIAL GROWTH; FILM GROWTH; GALLIUM NITRIDE; GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS;

ALUMINUM;

EID: 79954443002 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.4.045502 Document Type: Article

Times cited : (25)

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