Critical thickness of ZnTe on GaSb(211)B

Journal of Electronic Materials

Volumn 41, Issue 11, 2012, Pages 3001-3006

  Chai, J ^a   Noriega, O C ^a   Dinan, J H ^a   Myers, T H ^a  

^a TEXAS STATE UNIVERSITY   (United States)

Author keywords

Critical thickness; GaSb; Molecular beam epitaxy; Photoluminescence; X ray diffraction; ZnTe

Indexed keywords

CRITICAL THICKNESS; EXPERIMENTAL STUDIES; GASB; HETEROEPITAXIAL; HIGH RESOLUTION X RAY DIFFRACTION; MATERIAL SYSTEMS; PHOTOLUMINESCENCE MEASUREMENTS; THEORETICAL VALUES; ZNTE;

EPITAXIAL GROWTH; MATERIALS SCIENCE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION; ZINC COMPOUNDS;

GALLIUM ALLOYS;

EID: 84868528977     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-012-2120-8     Document Type: Article

References (21)

1. J. Fan, L. Ouyang, X. Liu, D. Ding, J.K. Furdyna, D.J. Smith, and Y. Zhang, J. Cryst. Growth 323, 127 2011).
2. N. Dhar, P. Boyd, M. Martinka, J. Dinan, L. Almeida, and N. Goldsman, J. Electron. Mater. 29, 748 2000).
3. P. Tomasini, A. Haidoux, J. Domagala, J. Tedenac, M. Maurin, and B. Ducourant, J. Cryst. Growth 165, 203 1996).
4. H. Leiderer, G. Jahn, M. Silberbauer, W. Kuhn, H. Wagner, W. Limmer, and W. Gebhardt, J. Appl. Phys. 70, 398 1991).
5. A. Million, N. Dhar, and J. Dinan, J. Cryst. Growth 159, 76 1996).
6. X. Zhang, P. Li, D. Parent, G. Zhao, J. Ayers, and F. Jain, J. Electron. Mater. 28, 553 1999).
7. J. Matthews and A. Blakeslee, J. Cryst. Growth 27, 118 1974).
8. E. Fitzgerald, Mater. Sci. Rep. 7, 91 1991).
9. X. Liu, A. Hopgood, B. Usher, H. Wang, and N. Braithwaite, Semicond. Sci. Technol. 14, 1154 1999).
10. K. Pinardi, U. Jain, S. Jain, H. Maes, R. Van Overstraeten, and M. Willander, J. Appl. Phys. 83, 4724 1998).
11. G. Cohen-Solal, F. Bailly, and M. Barbe, J. Cryst. Growth 138, 68 1994).
12. D. Dunstan, S. Young, and R. Dixon, J. Appl. Phys. 70, 3038 1991).
13. C. Li, B. Tanner, D. Ashenford, J. Hogg, and B. Lunn, J. Appl. Phys. 82, 2281 1997).
14. B. VanMill, Doping and electron simulated desorption of zinc selenide grown by molecular beam epitaxy. Master's thesis, West Virginia University, WV, USA 2002).
15. R.N. Jacobs, J. Markunas, J. Pellegrino, L.A. Almeida, M. Groenert, M. Jaime-Vasquez, N. Mahadik, C. Andrews, and S.B. Qadri, J. Cryst. Growth 310, 2960 2008).
16. M. Luo, B. VanMil, R. Tompkins, T. Myers, and N. Giles, J. Appl. Phys. 97, 013518 2005).
17. M. Ekawa and T. Taguchi, Jpn. J. Appl. Phys. 2 28, L1341 1989).
18. M. Yamada, K. Yamamoto, and K. Abe, J. Phys. D Appl. Phys. 10, 1309 1977).
19. A. Navarro-Quezada,A. Rodriguez,M. Vidal, andH. Navarro- Contreras, J. Cryst. Growth 291, 340 2006).
20. J. Lee, N. Giles, D. Rajavel, and C. Summers, Phys. Rev. B 49, 1668 1994).
21. T. Tanaka, K. Hayashida, S. Wang, Q. Guo, M. Nishio, and H. Ogawa, J. Cryst. Growth 248, 43 2003).