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Journal of Crystal Growth

Volumn 165, Issue 3, 1996, Pages 203-209

Growth by atmospheric pressure OMVPE and X-ray analysis of ZnTe epilayers on III-V substrates

(6) Tomasini, P a Haidoux, A a Domagala, J a,c Tedenac, J C a Maurin, M a Ducourant, B b

a URA CNRS 407 (France)

b UNIVERSITÉ DE MONTPELLIER (France)

c INSTITUTE OF PHYSICS (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; BAND STRUCTURE; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); ENERGY GAP; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; X RAY ANALYSIS; X RAY CRYSTALLOGRAPHY;

BANDGAP; EPILAYER STRAIN; GALLIUM ANTIMONIDE; INDIUM PHOSPHIDE; ZINC TELLURIDE EPILAYERS;

EPITAXIAL GROWTH;

EID: 0030215549 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(96)00160-1 Document Type: Article

Times cited : (5)

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