Heteroepitaxy of CdTe on {211}Si substrates by molecular beam epitaxy

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 76-80

  Million, A ^a   Dhar, N K ^b   Dinan, J H ^c  

^a CEA LETI   (France)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CRYSTAL DEFECTS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; SURFACE TREATMENT; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL QUALITY; FULL WIDTH AT HALF MAXIMUM; HETEROEPITAXY; MULTI-LAYER ANNEAL CYCLE; X RAY REFLECTION;

EPITAXIAL GROWTH;

EID: 0030562161     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00777-6     Document Type: Article

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