Photoluminescence of ZnTe and ZnTe:Cr grown by molecular-beam epitaxy

Journal of Applied Physics

Volumn 97, Issue 1, 2005, Pages

  Luo, Ming ^a   Vanmil, B L ^a   Tompkins, R P ^a   Myers, T H ^a   Giles, N C ^a  

^a WEST VIRGINIA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR-BOUND-EXCITON LINE; BEAM-EQUIVALENT PRESSURE (BEP); EPILAYERS; SPECTRAL RANGE;

ACTIVATION ENERGY; BINDING ENERGY; CHROMIUM; CRYSTALS; EXCITONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUENCHING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; THERMAL EFFECTS; THIN FILMS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 19944430352     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1827921     Document Type: Article

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