Growth and optical properties of high-quality ZnTe homoepitaxial layers by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 43-49

  Tanaka, Tooru ^a   Hayashida, Kazuki ^a   Wang, Shanli ^a   Guo, Qixin ^a   Nishio, Mitsuhiro ^a   Ogawa, Hiroshi ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; B2. Semiconducting II VI materials

Indexed keywords

BINDING ENERGY; CHEMICAL REACTORS; ENERGY GAP; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; ZINC COMPOUNDS;

EXCITONIC EMISSION;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0037291003     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01878-X     Document Type: Conference Paper

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