In-plane and out-of-plane lattice parameters of [1 1 n] epitaxial strained layers

Journal of Crystal Growth

Volumn 291, Issue 2, 2006, Pages 340-347

  Navarro Quezada, A ^a   Rodriguez A G ^a   Vidal, M A ^a   Navarro Contreras, H ^a  

^a INSTITUTO DE INVESTIGACIÓN EN COMUNICACIÓN ÓPTICA   (Mexico)

Author keywords

A1. High resolution X ray diffraction; A1. Lattice parameters; A1. Substrates; B1. GeAs

Indexed keywords

ARSENIC; EPITAXIAL GROWTH; FILM GROWTH; GERMANIUM; LATTICE CONSTANTS; LAYERED MANUFACTURING; SEMICONDUCTING GALLIUM; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

GEAS; HIGH RESOLUTION X RAY DIFFRACTION; RECIPROCAL SPACE MAPS (RSM); ROCKING CURVES (RC);

SUPERCONDUCTING FILMS;

EID: 33646903219     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.03.017     Document Type: Article

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