CdZnTe heteroepitaxy on 3” (112) Si: Interface, surface, and layer characteristics

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 748-753

  Dhar, N K ^a   Boyd, P R ^a   Martinka, M ^b   Dinan, J H ^b   Almeida, L A ^c   Goldsman, N ^d  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

^c E OIR Measurements Inc   (United States)

^d UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ARSENIC; AUGER ELECTRON SPECTROSCOPY; CHEMISORPTION; DEPOSITION; MOLECULAR BEAM EPITAXY; MONOLAYERS; NUCLEATION; PASSIVATION; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

CADMIUM ZINC TELLURIDE;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033702187     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0219-9     Document Type: Article

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