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Volumn 323, Issue 1, 2011, Pages 127-131
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Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (0 0 1) substrates for electronic and optoelectronic device applications
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Author keywords
Infrared devices; Molecular beam epitaxy; Semiconducting IIVI materials; X ray diffraction
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Indexed keywords
COMPOUND SEMICONDUCTORS;
DIFFERENT SUBSTRATES;
GAAS;
INAS;
INP;
INP SUBSTRATES;
MATERIAL PROPERTY;
PARTIAL DISLOCATIONS;
RESIDUAL TENSILE STRAIN;
SEMICONDUCTING II-VI MATERIALS;
THERMAL EXPANSION COEFFICIENTS;
VIRTUAL SUBSTRATES;
VISIBLE PHOTOLUMINESCENCE;
XRD ANALYSIS;
DIFFRACTION;
ELECTROOPTICAL DEVICES;
EPILAYERS;
EPITAXIAL GROWTH;
GALLIUM ARSENIDE;
HIGH RESOLUTION ELECTRON MICROSCOPY;
INDIUM ARSENIDE;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
OPTICAL PROPERTIES;
OPTOELECTRONIC DEVICES;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING INDIUM;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WELLS;
SUBSTRATES;
THERMAL EXPANSION;
X RAY DIFFRACTION;
ZINC COMPOUNDS;
GALLIUM ALLOYS;
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EID: 79957980224
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.11.164 Document Type: Article |
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Times cited : (41)
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References (11)
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