High resolution x-ray diffraction and scattering measurement of the interfacial structure of ZnTe/GaSb epilayers

Journal of Applied Physics

Volumn 82, Issue 5, 1997, Pages 2281-2287

  Li, C R ^a,c   Tanner, B K ^a   Ashenford, D E ^b   Hogg, J H C ^b   Lunn, B ^b  

^a DURHAM UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF HULL   (United Kingdom)

^c INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FILM GROWTH; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SCATTERING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SURFACE STRUCTURE; X RAY DIFFRACTION;

EPILAYERS; GALLIUM ANTIMONIDE; GRAZING INCIDENCE SCATTERING; ZINC TELLURIDE;

SEMICONDUCTING FILMS;

EID: 0031233930     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366035     Document Type: Article

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