Formation of misfit dislocations during growth of InxGa1-xAs/GaAs strained-layer heterostructures

Semiconductor Science and Technology

Volumn 14, Issue 12, 1999, Pages 1154-1160

  Liu, X W ^a   Hopgood, A A ^a   Usher, B F ^b   Wang, H ^c   Braithwaite, N St J ^a  

^a OPEN UNIVERSITY   (United Kingdom)

^b LA TROBE UNIVERSITY   (Australia)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

MATTHEWS-BLAKESLEE (M-B) MODEL;

HETEROJUNCTIONS;

EID: 0033349503     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/12/325     Document Type: Article

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