Scaling of equivalent oxide thickness of atomic layer deposited HfO 2 film using RuO 2 electrodes suppressing the dielectric dead-layer effect

Applied Physics Letters

Volumn 101, Issue 17, 2012, Pages

  Kyeom Kim, Hyo ^a   Yu, Il Hyuk ^b   Lee, Jae Ho ^b   Park, Tae Joo ^c   Seong Hwang, Cheol ^a,b  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; DIELECTRIC PERFORMANCE; EQUIVALENT OXIDE THICKNESS; HIGH-K HFO; IONIC POLARIZATION; METAL GATE; SCREENING LENGTHS; SI SUBSTRATES;

ATOMIC LAYER DEPOSITION; HAFNIUM OXIDES; PLATINUM; RUTHENIUM COMPOUNDS;

RUTHENIUM ALLOYS;

EID: 84868034864     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4764541     Document Type: Article

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