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Volumn 116, Issue 42, 2012, Pages 22315-22318

Interfacial properties of silicon nitride grown on epitaxial graphene on 6H-SiC substrate

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; ELECTRONIC DEVICE; EPITAXIAL GRAPHENE; FIRST-PRINCIPLES CALCULATION; IN-SITU; INTERFACIAL PROPERTY; SIC SUBSTRATES; THERMALLY STABLE; UNIFORM COVERAGE; X RAY PHOTOEMISSION SPECTROSCOPY;

EID: 84867885682     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp304054u     Document Type: Article
Times cited : (18)

References (33)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.