Electronic structure of germanium nitride considered for gate dielectrics

Journal of Applied Physics

Volumn 102, Issue 1, 2007, Pages

  Yang, M ^a   Wang, S J ^b   Feng, Y P ^a   Peng, G W ^a   Sun, Y Y ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; ENERGY GAP; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; LATTICE MISMATCH; LOCAL DENSITY APPROXIMATION; OPTICAL PROPERTIES; PERMITTIVITY;

FIRST-PRINCIPLES CALCULATIONS; GERMANIUM NITRIDE; STATIC DIELECTRIC CONSTANTS;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 34547157571     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2747214     Document Type: Article

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