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AIP Advances

Volumn 1, Issue 3, 2011, Pages

Graphene on β-Si3N4: An ideal system for graphene-based electronics

(5) Yang, Ming a Zhang, Chun a Wang, Shijie b Feng, Yuanping a Ariando, a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; SILICON NITRIDE; SUBSTRATES;

BI-LAYER; ELECTRONIC DEVICE; FUTURE DESIGNS; HIGH DIELECTRIC MATERIALS; IDEAL SYSTEMS; NON-POLAR; SINGLE LAYER; THEORETICAL CALCULATIONS;

GRAPHENE;

EID: 80053506004 PISSN: None EISSN: 21583226 Source Type: Journal
DOI: 10.1063/1.3623567 Document Type: Article

Times cited : (33)

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