Determination of effective electron inelastic mean free paths in SiO 2 and Si3N4 using a Si reference

Surface Science

Volumn 543, Issue 1-3, 2003, Pages 153-161

  Jung, R ^a   Lee, J C ^a   Orosz, G T ^b   Sulyok, A ^b   Zsolt, G ^b   Menyhard, M ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Silicon nitride; Silicon oxides; Sputtering; Surface electrical transport (surface conductivity, surface recombination, etc.)

Indexed keywords

COMPUTER SIMULATION; ELECTRON SCATTERING; ELECTRON SPECTROSCOPY; MONTE CARLO METHODS; SILICA; SILICON NITRIDE; SPUTTERING; TRANSPORT PROPERTIES;

INELASTIC SCATTERINGS;

SURFACE PROPERTIES;

EID: 0043285298     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2003.08.005     Document Type: Article

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