Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes

Optics Express

Volumn 20, Issue 106, 2012, Pages A812-A821

  Armstrong, A ^a   Henry, T A ^a   Koleske, D D ^a   Crawford, M H ^a   Lee, S R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; DEEP LEVEL OPTICAL SPECTROSCOPY; DEEP-LEVEL DEFECTS; DEFECT INCORPORATION; DEFECT STATE; DEPTH-RESOLVED; INGAN QUANTUM WELLS; INGAN/GAN; MULTIQUANTUM WELLS; NANO SCALE; PHOTOCAPACITANCE; POTENTIAL IMPACTS; QUANTUM BARRIERS;

DEFECTS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; QUANTUM THEORY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84867770023     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.00A812     Document Type: Article

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