Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes

Semiconductor Science and Technology

Volumn 23, Issue 2, 2008, Pages

  Rigutti, L ^a   Castaldini, A ^a   Meneghini, M ^b   Cavallini, A ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GALLIUM NITRIDE; PHOTOCURRENTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS;

PHOTOCURRENT (PC) SPECTROSCOPY;

LIGHT EMITTING DIODES;

EID: 42549141285     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/2/025004     Document Type: Article

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