SCOPUS 정보 검색 플랫폼

Physical Review B - Condensed Matter and Materials Physics

Volumn 77, Issue 4, 2008, Pages

Anomalous deep-level transients related to quantum well piezoelectric fields in Iny Ga1-y N GaN -heterostructure light-emitting diodes

(3) Rigutti, L a Castaldini, A a Cavallini, A a

a UNIVERSITY OF BOLOGNA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 38049123221 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.77.045312 Document Type: Article

Times cited : (28)

References (39)

1
- 0642275027
- PRBMDO 0163-1829 10.1103/PhysRevB.56.R10024
- F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.56.R10024 56, R10024 (1997).
- (1997) Phys. Rev. B , vol.56 , pp. 10024
- Bernardini, F.¹ Fiorentini, V.² Vanderbilt, D.³

2
- 0001598226
- APPLAB 0003-6951 10.1063/1.122247
- T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nagakawa, Y. Yamaoka, and N. Yamada, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.122247 73, 1691 (1998).
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1691
- Takeuchi, T.¹ Wetzel, C.² Yamaguchi, S.³ Sakai, H.⁴ Amano, H.⁵ Akasaki, I.⁶ Kaneko, Y.⁷ Nagakawa, S.⁸ Yamaoka, Y.⁹ Yamada, N.¹⁰

3
- 79956053005
- APPLAB 0003-6951 10.1063/1.1448668
- V. Fiorentini, F. Bernardini, and O. Ambacher, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1448668 80, 1204 (2002).
- (2002) Appl. Phys. Lett. , vol.80 , pp. 1204
- Fiorentini, V.¹ Bernardini, F.² Ambacher, O.³

4
- 17644418746
- APPLAB 0003-6951 10.1063/1.1896446
- I. H. Brown, I. A. Pope, P. M. Smowton, P. Blood, D. J. Thomson, W. W. Chow, D. P. Bour, and M. Kneissl, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1896446 86, 131108 (2005).
- (2005) Appl. Phys. Lett. , vol.86 , pp. 131108
- Brown, I.H.¹ Pope, I.A.² Smowton, P.M.³ Blood, P.⁴ Thomson, D.J.⁵ Chow, W.W.⁶ Bour, D.P.⁷ Kneissl, M.⁸

5
- 0035920882
- APPLAB 0003-6951 10.1063/1.1396315
- Y. D. Jho, J. S. Yahng, E. Oh, and D. S. Kim, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1396315 79, 1130 (2001).
- (2001) Appl. Phys. Lett. , vol.79 , pp. 1130
- Jho, Y.D.¹ Yahng, J.S.² Oh, E.³ Kim, D.S.⁴

6
- 79956006094
- APPLAB 0003-6951 10.1063/1.1493229
- F. Renner, P. Kiesel, G. H. Döhler, M. Kneissl, C. G. Van de Walle, and N. M. Johnson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1493229 81, 490 (2002).
- (2002) Appl. Phys. Lett. , vol.81 , pp. 490
- Renner, F.¹ Kiesel, P.² Döhler, G.H.³ Kneissl, M.⁴ Van De Walle, C.G.⁵ Johnson, N.M.⁶

7
- 1542313982
- PRBMDO 0163-1829 10.1103/PhysRevB.69.045310
- G. Franssen, P. Perlin, and T. Suski, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.045310 69, 045310 (2004).
- (2004) Phys. Rev. B , vol.69 , pp. 045310
- Franssen, G.¹ Perlin, P.² Suski, T.³

8
- 0000418855
- PRBMDO 0163-1829 10.1103/PhysRevB.58.R13371
- M. Leroux, N. Grandjean, M. Laugt, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.58.R13371 58, R13371 (1998).
- (1998) Phys. Rev. B , vol.58 , pp. 13371
- Leroux, M.¹ Grandjean, N.² Laugt, M.³ Massies, J.⁴ Gil, B.⁵ Lefebvre, P.⁶ Bigenwald, P.⁷

9
- 0042924379
- JAPIAU 0021-8979 10.1063/1.1593218
- J. M. Shah, Y. L. Li, T. Gessmann, and E. F. Schubert, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1593218 94, 2627 (2003).
- (2003) J. Appl. Phys. , vol.94 , pp. 2627
- Shah, J.M.¹ Li, Y.L.² Gessmann, T.³ Schubert, E.F.⁴

10
- 0036537142
- JAPIAU 0021-8979 10.1063/1.1459604
- M. Zervos, A. Kostopoulos, G. Constantinidis, M. Kambayaki, and A. Georgakilas, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1459604 91, 4387 (2002).
- (2002) J. Appl. Phys. , vol.91 , pp. 4387
- Zervos, M.¹ Kostopoulos, A.² Constantinidis, G.³ Kambayaki, M.⁴ Georgakilas, A.⁵

11
- 38049104091
- Proceedings of the Materials Research Society Fall 2005 Meeting (unpublished), Paper No. 0892-FF32-01.
- R. J. Kaplar, S. Kurtz, and D. Koleske, Proceedings of the Materials Research Society Fall 2005 Meeting (unpublished), Paper No. 0892-FF32-01.
- Kaplar, R.J.¹ Kurtz, S.² Koleske, D.³

12
- 0242272328
- JAPIAU 0021-8979 10.1063/1.1611629
- A. Cavallini, G. Verzellesi, A. F. Basile, C. Canali, A. Castaldini, and E. Zanoni, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1611629 94, 5297 (2003).
- (2003) J. Appl. Phys. , vol.94 , pp. 5297
- Cavallini, A.¹ Verzellesi, G.² Basile, A.F.³ Canali, C.⁴ Castaldini, A.⁵ Zanoni, E.⁶

13
- 10344237012
- EPAPFV 1286-0042 10.1051/epjap:2004139
- O. Yastrubchak, T. Wosinski, A. Makosa, T. Figielski, S. Porowski, I. Grzegory, R. Czernecki, and P. Perlin, Eur. Phys. J.: Appl. Phys. EPAPFV 1286-0042 10.1051/epjap:2004139 27, 201 (2004).
- (2004) Eur. Phys. J.: Appl. Phys. , vol.27 , pp. 201
- Yastrubchak, O.¹ Wosinski, T.² Makosa, A.³ Figielski, T.⁴ Porowski, S.⁵ Grzegory, I.⁶ Czernecki, R.⁷ Perlin, P.⁸

14
- 2342511529
- JVTBD9 1071-1023 10.1116/1.1688345
- F. Capotondi, G. Biasiol, I. Vobornik, L. Sorba, F. Giazotto, A. Cavallini, and B. Fraboni, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1688345 22, 702 (2004).
- (2004) J. Vac. Sci. Technol. B , vol.22 , pp. 702
- Capotondi, F.¹ Biasiol, G.² Vobornik, I.³ Sorba, L.⁴ Giazotto, F.⁵ Cavallini, A.⁶ Fraboni, B.⁷

15
- 0003145936
- PRBMDO 0163-1829 10.1103/PhysRevB.40.1058
- N. Debbar, D. Biswas, and P. Bhattacharya, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.40.1058 40, 1058 (1989).
- (1989) Phys. Rev. B , vol.40 , pp. 1058
- Debbar, N.¹ Biswas, D.² Bhattacharya, P.³

16
- 0041094069
- PRBMDO 0163-1829 10.1103/PhysRevB.50.18226
- Q. Wang, F. Lu, D. Gong, X. Chen, J. Wang, H. Sun, and X. Wang, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.50.18226 50, 18226 (1994).
- (1994) Phys. Rev. B , vol.50 , pp. 18226
- Wang, Q.¹ Lu, F.² Gong, D.³ Chen, X.⁴ Wang, J.⁵ Sun, H.⁶ Wang, X.⁷

17
- 0000927827
- PRBMDO 0163-1829 10.1103/PhysRevB.57.12388
- Q. S. Zhu, X. B. Wang, Z. T. Zhong, X. C. Zhou, Y. P. He, Z. P. Cao, G. Z. Zhang, J. Xiao, X. H. Sun, H. Z. Yang, and Q. G. Du, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.57.12388 57, 12388 (1998).
- (1998) Phys. Rev. B , vol.57 , pp. 12388
- Zhu, Q.S.¹ Wang, X.B.² Zhong, Z.T.³ Zhou, X.C.⁴ He, Y.P.⁵ Cao, Z.P.⁶ Zhang, G.Z.⁷ Xiao, J.⁸ Sun, X.H.⁹ Yang, H.Z.¹⁰ Du, Q.G.¹¹

18
- 0009379671
- PRBMDO 0163-1829 10.1103/PhysRevB.50.14287
- K. Schmalz, I. N. Yassievich, H. Rücker, H. G. Grimmeiss, H. Frankenfeld, W. Mehr, H. J. Osten, P. Schley, and H. P. Zeindl, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.50.14287 50, 14287 (1994).
- (1994) Phys. Rev. B , vol.50 , pp. 14287
- Schmalz, K.¹ Yassievich, I.N.² Rücker, H.³ Grimmeiss, H.G.⁴ Frankenfeld, H.⁵ Mehr, W.⁶ Osten, H.J.⁷ Schley, P.⁸ Zeindl, H.P.⁹

19
- 0011182347
- PRBMDO 0163-1829 10.1103/PhysRevB.54.16799
- K. Schmalz, I. N. Yassievich, E. J. Collart, and D. J. Gravesteijn, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.54.16799 54, 16799 (1996).
- (1996) Phys. Rev. B , vol.54 , pp. 16799
- Schmalz, K.¹ Yassievich, I.N.² Collart, E.J.³ Gravesteijn, D.J.⁴

20
- 33646529915
- APPLAB 0003-6951 10.1063/1.2200392
- J. W. Kim, G. H. Song, and J. W. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2200392 88, 182103 (2006).
- (2006) Appl. Phys. Lett. , vol.88 , pp. 182103
- Kim, J.W.¹ Song, G.H.² Lee, J.W.³

21
- 0004052502
- Academic, London
- P. Blood and J. W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States (Academic, London, 1990).
- (1990) The Electrical Characterization of Semiconductors: Majority Carriers and Electron States
- Blood, P.¹ Orton, J.W.²

22
- 79956041003
- APPLAB 0003-6951 10.1063/1.1489481
- J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1489481 80, 4741 (2002).
- (2002) Appl. Phys. Lett. , vol.80 , pp. 4741
- Wu, J.¹ Walukiewicz, W.² Yu, K.M.³ Ager III, J.W.⁴ Haller, E.E.⁵ Lu, H.⁶ Schaff, W.J.⁷

23
- 6244257784
- JAPIAU 0021-8979 10.1063/1.361466
- B. M. Tschirner, F. Morier-Genoud, D. Martin, and F. K. Reinhart, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.361466 79, 7005 (1996).
- (1996) J. Appl. Phys. , vol.79 , pp. 7005
- Tschirner, B.M.¹ Morier-Genoud, F.² Martin, D.³ Reinhart, F.K.⁴

24
- 0001258430
- JAPIAU 0021-8979 10.1063/1.368380
- C. R. Moon, B. D. Choe, S. D. Kwon, H. K. Shin, and H. J. Lim, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.368380 84, 2673 (1998).
- (1998) J. Appl. Phys. , vol.84 , pp. 2673
- Moon, C.R.¹ Choe, B.D.² Kwon, S.D.³ Shin, H.K.⁴ Lim, H.J.⁵

25
- 0017631852
- ARMSCX 0084-6600 10.1146/annurev.ms.07.080177.002113
- G. L. Miller, D. V. Lang, and L. C. Kimerling, Annu. Rev. Mater. Sci. ARMSCX 0084-6600 10.1146/annurev.ms.07.080177.002113 7, 377 (1977).
- (1977) Annu. Rev. Mater. Sci. , vol.7 , pp. 377
- Miller, G.L.¹ Lang, D.V.² Kimerling, L.C.³

26
- 0000815007
- JVTBD9 0734-211X 10.1116/1.585897
- S. Strite and H. Morkoç, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.585897 10, 1237 (1992).
- (1992) J. Vac. Sci. Technol. B , vol.10 , pp. 1237
- Strite, S.¹ Morkoç, H.²

27
- 0004071496
- Wiley-Interscience, New York
- D. K. Schroder, Semiconductor Material and Device Characterization (Wiley-Interscience, New York, 1998).
- (1998) Semiconductor Material and Device Characterization
- Schroder, D.K.¹

28
- 33645227114
- JAPIAU 0021-8979 10.1063/1.2178856
- F. Rossi, M. Pavesi, M. Meneghini, G. Salviati, M. Manfredi, G. Meneghesso, A. Castaldini, A. Cavallini, L. Rigutti, U. Strauss, U. Zehnder, and E. Zanoni, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2178856 99, 053104 (2006).
- (2006) J. Appl. Phys. , vol.99 , pp. 053104
- Rossi, F.¹ Pavesi, M.² Meneghini, M.³ Salviati, G.⁴ Manfredi, M.⁵ Meneghesso, G.⁶ Castaldini, A.⁷ Cavallini, A.⁸ Rigutti, L.⁹ Strauss, U.¹⁰ Zehnder, U.¹¹ Zanoni, E.¹²

29
- 0004052502
- This could be, in principle, a procedure for the profiling of the deep level concentration equivalent to the so-called double-DLTS (DDLTS), which is regarded as more accurate in homogeneous junctions [see, for instance, Academic, London
- This could be, in principle, a procedure for the profiling of the deep level concentration equivalent to the so-called double-DLTS (DDLTS), which is regarded as more accurate in homogeneous junctions [see, for instance, P. Blood and J. W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States (Academic, London, 1990)]. However, concentration profiling was a minor issue in the present case, and DDLTS was not considered a viable investigation technique because it varies the occupation of deep levels in a wide portion of the junction.
- (1990) The Electrical Characterization of Semiconductors: Majority Carriers and Electron States
- Blood, P.¹ Orton, J.W.²

30
- 0040031104
- JAPIAU 0021-8979 10.1063/1.360086
- D. C. Look and J. R. Sizelove, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.360086 78, 2848 (1995).
- (1995) J. Appl. Phys. , vol.78 , pp. 2848
- Look, D.C.¹ Sizelove, J.R.²

31
- 84981870503
- PHSSAK 0031-8957 10.1002/pssb.19640060214
- T. Figielski, Phys. Status Solidi PHSSAK 0031-8957 10.1002/pssb. 19640060214 6, 429 (1964).
- (1964) Phys. Status Solidi , vol.6 , pp. 429
- Figielski, T.¹

32
- 0000266199
- PRBMDO 0163-1829 10.1103/PhysRevB.52.13726
- W. Schröter, J. Kronewitz, U. Gnauert, F. Riedel, and M. Seibt, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.52.13726 52, 13726 (1995).
- (1995) Phys. Rev. B , vol.52 , pp. 13726
- Schröter, W.¹ Kronewitz, J.² Gnauert, U.³ Riedel, F.⁴ Seibt, M.⁵

33
- 0037122090
- JCOMEL 0953-8984 10.1088/0953-8984/14/48/351
- Z.-Q. Fang, D. C. Look, and L. Polenta, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/14/48/351 14, 13061 (2002).
- (2002) J. Phys.: Condens. Matter , vol.14 , pp. 13061
- Fang, Z.-Q.¹ Look, D.C.² Polenta, L.³

34
- 0042512228
- JAPIAU 0021-8979 10.1063/1.1586981
- H. K. Cho, C. S. Kim, and C.-H. Hongm, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1586981 94, 1485 (2003).
- (2003) J. Appl. Phys. , vol.94 , pp. 1485
- Cho, H.K.¹ Kim, C.S.² Hongm, C.-H.³

35
- 4444258862
- JCOMEL 0953-8984 10.1088/0953-8984/16/34/027
- C. B. Soh, S. J. Chua, H. F. Lim, D. Z. Chi, W. Liu, and S. Tripathy, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/16/34/027 16, 6305 (2004).
- (2004) J. Phys.: Condens. Matter , vol.16 , pp. 6305
- Soh, C.B.¹ Chua, S.J.² Lim, H.F.³ Chi, D.Z.⁴ Liu, W.⁵ Tripathy, S.⁶

36
- 0021425445
- JAPIAU 0021-8979 10.1063/1.332914
- D. Pons, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.332914 55, 3644 (1983).
- (1983) J. Appl. Phys. , vol.55 , pp. 3644
- Pons, D.¹

37
- 38049121748
- M. Grundmann, BANDENG (http://my.ece.ucsb.edu/mgrundmann/bandeng.htm).
- Grundmann, M.¹

38
- 42549141285
- SSTEET 0268-1242 10.1088/0268-1242/23/2/025004
- L. Rigutti, A. Castaldini, M. Meneghini, and A. Cavallini, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/23/2/025004 23, 025004 (2008).
- (2008) Semicond. Sci. Technol. , vol.23 , pp. 025004
- Rigutti, L.¹ Castaldini, A.² Meneghini, M.³ Cavallini, A.⁴

39
- 38049111142
- F. Rossi, M. Pavesi, M. Meneghini, G. Salviati, M. Manfredi, and E. Zanoni (unpublished).
- Rossi, F.¹ Pavesi, M.² Meneghini, M.³ Salviati, G.⁴ Manfredi, M.⁵ Zanoni, E.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.