메뉴 건너뛰기




Volumn 261, Issue , 2012, Pages 727-729

Phase transition in sputtered HfO 2 thin films: A qualitative Raman study

Author keywords

Dielectrics; Hafnium dioxide; High ; Raman scattering; Sputtering

Indexed keywords

AMORPHOUS FILMS; CRYSTALLITE SIZE; DEPOSITION; DIELECTRIC MATERIALS; HAFNIUM OXIDES; RAMAN SCATTERING; SPUTTERING;

EID: 84867741205     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.08.088     Document Type: Article
Times cited : (16)

References (27)
  • 6
    • 84867747841 scopus 로고    scopus 로고
    • Scaling the Gate Dielectric: Integration of High-k Gate Dielectrics CMOS Applications
    • Ottawa, Ontario
    • D.A. Buchanan Scaling the Gate Dielectric: Integration of High-k Gate Dielectrics CMOS Applications 11th Canadian Semiconductor Technology Conference Ottawa, Ontario 2003
    • (2003) 11th Canadian Semiconductor Technology Conference
    • Buchanan, D.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.