Heteroepitaxial VO 2 thin films on GaN: Structure and metal-insulator transition characteristics

Journal of Applied Physics

Volumn 112, Issue 7, 2012, Pages

  Zhou, You ^a   Ramanathan, Shriram ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANES; C-SAPPHIRE; CLOSE PACKED; CURRENT-DRIVEN; ELECTRICAL CHARACTERIZATION; EPITAXIAL RELATIONS; FOUR-ORDER; FUNCTIONAL PROPERTIES; GAN EPITAXIAL LAYERS; GAN LAYERS; HETEROEPITAXIAL; HIGH QUALITY; HIGH-TEMPERATURE DEPOSITION; INTEGRATED DEVICE; MONOLITHIC INTEGRATION; NITRIDE SEMICONDUCTORS; ORIENTATION RELATIONSHIP; RAMAN SCATTERING MEASUREMENTS; RESISTANCE CHANGE; ROOM TEMPERATURE; SOLID STATE ELECTRONICS; STEREOGRAPHIC PROJECTION; VANADIUM DIOXIDE;

ELECTRIC PROPERTIES; EPITAXIAL FILMS; EPITAXIAL GROWTH; MONOLITHIC INTEGRATED CIRCUITS; OXIDE FILMS; OXYGEN; PHOTOELECTRONS; SAPPHIRE; SEMICONDUCTOR INSULATOR BOUNDARIES; VANADIUM; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 84867563696     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4758185     Document Type: Article

References (39)

1. H. S. Choi, J. S. Ahn, J. H. Jung, T. W. Noh, and D. H. Kim, Phys. Rev. B 54 (7), 4621-4628 (1996). 10.1103/PhysRevB.54.4621
2. Z. Yang, C. Ko, V. Balakrishnan, G. Gopalakrishnan, and S. Ramanathan, Phys. Rev. B 82 (20), 205101 (2010). 10.1103/PhysRevB.82.205101
3. G. Fasol, Science 272 (5269), 1751-1752 (1996). 10.1126/science.272.5269. 1751
4. U. K. Mishra, L. Shen, T. E. Kazior, and W. Yi-Feng, Proc. IEEE 96 (2), 287-305 (2008). 10.1109/JPROC.2007.911060
5. A. D. Boardman, V. V. Grimalsky, Y. S. Kivshar, S. V. Koshevaya, M. Lapine, N. M. Litchinitser, V. N. Malnev, M. Noginov, Y. G. Rapoport, and V. M. Shalaev, Laser Photonics Rev. 5 (2), 287-307 (2011). 10.1002/lpor.201000012
6. C. Chen, Y. Zhu, Y. Zhao, J. H. Lee, H. Wang, A. Bernussi, M. Holtz, and Z. Fan, Appl. Phys. Lett. 97 (21), 211905 (2010). 10.1063/1.3519361
7. D. Ruzmetov, D. Heiman, B. B. Claflin, V. Narayanamurti, and S. Ramanathan, Phys. Rev. B 79 (15), 153107 (2009). 10.1103/PhysRevB.79.153107
8. Y. Muraoka and Z. Hiroi, Appl. Phys. Lett. 80 (4), 583-585 (2002). 10.1063/1.1446215
9. Y. Cui, X. Wang, Y. Zhou, R. Gordon, and S. Ramanathan, J. Cryst. Growth 338 (1), 96-102 (2012). 10.1016/j.jcrysgro.2011.10.025
10. T. Lei, J. K. F. Ludwig, and T. D. Moustakas, J. Appl. Phys. 74 (7), 4430-4437 (1993). 10.1063/1.354414
11. A. Gupta, R. Aggarwal, P. Gupta, T. Dutta, R. J. Narayan, and J. Narayan, Appl. Phys. Lett. 95 (11), 111915 (2009). 10.1063/1.3232241
12. T.-H. Yang, R. Aggarwal, A. Gupta, H. Zhou, R. J. Narayan, and J. Narayan, J. Appl. Phys. 107 (5), 053514 (2010). 10.1063/1.3327241
13. M. Hada, K. Okimura, and J. Matsuo, Phys. Rev. B 82 (15), 153401 (2010). 10.1103/PhysRevB.82.153401
14. D. H. Kim and H. S. Kwok, Appl. Phys. Lett. 65 (25), 3188-3190 (1994). 10.1063/1.112476
15. W. A. Melton and J. I. Pankove, J. Cryst. Growth 178 (1-2), 168-173 (1997). 10.1016/S0022-0248(97)00082-1
16. J. Longo, P. Kierkegaard, Acta Chem. Scand. 24, 420-426 (1970). 10.3891/acta.chem.scand.24-0420
17. V. Darakchieva, B. Monemar, and A. Usui, Appl. Phys. Lett. 91 (3), 031911 (2007). 10.1063/1.2753122
18. C. Kim, I. K. Robinson, J. Myoung, K. Shim, M.-C. Yoo, and K. Kim, Appl. Phys. Lett. 69 (16), 2358-2360 (1996). 10.1063/1.117524
19. W. Li and W.-X. Ni, Appl. Phys. Lett. 68 (19), 2705-2707 (1996). 10.1063/1.116315
20. M. Junaid, D. Lundin, J. Palisaitis, C.-L. Hsiao, V. Darakchieva, J. Jensen, P. O. A. Persson, P. Sandstrom, W.-J. Lai, L.-C. Chen, K.-H. Chen, U. Helmersson, L. Hultman, and J. Birch, J. Appl. Phys. 110 (12), 123519 (2011). 10.1063/1.3671560
21. H. L. M. Chang, H. You, J. Guo, and D. J. Lam, Appl. Surf. Sci. 48-49, 12-18 (1991). 10.1016/0169-4332(91)90301-Y
22. M. Marezio, D. B. McWhan, J. P. Remeika, and P. D. Dernier, Phys. Rev. B 5 (7), 2541-2551 (1972). 10.1103/PhysRevB.5.2541
23. D. B. McWhan, M. Marezio, J. P. Remeika, and P. D. Dernier, Phys. Rev. B 10 (2), 490-495 (1974). 10.1103/PhysRevB.10.490
24. J. Mendialdua, R. Casanova, and Y. Barbaux, J. Electron Spectrosc. Relat. Phenom. 71 (3), 249-261 (1995). 10.1016/0368-2048(94)02291-7
25. G. Silversmit, D. Depla, H. Poelman, G. B. Marin, and R. De Gryse, J. Electron Spectrosc. Relat. Phenom. 135 (2-3), 167-175 (2004). 10.1016/j.elspec.2004.03.004
26. M. C. Biesinger, L. W. M. Lau, A. R. Gerson, and R. S. C. Smart, Appl. Surf. Sci. 257 (3), 887-898 (2010). 10.1016/j.apsusc.2010.07.086
27. R. Lindström, V. Maurice, S. Zanna, L. Klein, H. Groult, L. Perrigaud, C. Cohen, and P. Marcus, Surf. Interface Anal. 38 (1), 6-18 (2006). 10.1002/sia.2141
28. C. Ko, Z. Yang, and S. Ramanathan, ACS Appl. Mater. Interfaces 3 (9), 3396-3401 (2011). 10.1021/am2006299
29. M. Pophristic, F. H. Long, M. Schurman, J. Ramer, and I. T. Ferguson, Appl. Phys. Lett. 74 (23), 3519-3521 (1999). 10.1063/1.124136
30. V. V. Chaldyshev, F. H. Pollak, M. Pophristic, S. P. Guo, and I. Ferguson, J. Appl. Phys. 92 (11), 6601-6606 (2002). 10.1063/1.1519342
31. P. Schilbe, Physica B 316-317, 600-602 (2002). 10.1016/S0921-4526(02) 00584-7
32. C. Marini, E. Arcangeletti, D. Di Castro, L. Baldassare, A. Perucchi, S. Lupi, L. Malavasi, L. Boeri, E. Pomjakushina, K. Conder, and P. Postorino, Phys. Rev. B 77 (23), 235111 (2008). 10.1103/PhysRevB.77.235111
33. A. C. Jones, S. Berweger, J. Wei, D. Cobden, and M. B. Raschke, Nano Lett. 10 (5), 1574-1581 (2010). 10.1021/nl903765h
34. J. C. Parker, Phys. Rev. B 42 (5), 3164-3166 (1990). 10.1103/PhysRevB.42. 3164
35. C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. S. Chang, T. K. Lin, H. L. Liu, and J. J. Tang, Semicond. Sci. Technol. 20 (6), 485 (2005). 10.1088/0268-1242/20/6/002
36. Y. Wang and Z. Zhang, Physica E (Amsterdam) 41 (4), 548-551 (2009). 10.1016/j.physe.2008.10.006
37. H. Yin, M. Luo, K. Yu, Y. Gao, R. Huang, Z. Zhang, M. Zeng, C. Cao, and Z. Zhu, ACS Appl. Mater. Interfaces 3 (6), 2057-2062 (2011). 10.1021/am200291a
38. J. I. Pankove and H. Schade, Appl. Phys. Lett. 25 (1), 53-55 (1974). 10.1063/1.1655276
39. J. C. Duchene, M. M. Terraillon, M. Pailly, and G. B. Adam, IEEE Trans. Electron Devices 18 (12), 1151-1155 (1971). 10.1109/T-ED.1971.17347