Work function of vanadium dioxide thin films across the metal-insulator transition and the role of surface nonstoichiometry

ACS Applied Materials and Interfaces

Volumn 3, Issue 9, 2011, Pages 3396-3401

  Ko, Changhyun ^a   Yang, Zheng ^a   Ramanathan, Shriram ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

Kelvin force microscopy; metal insulator transition; near surface stoichiometry; thin film; vanadium dioxide; work function; X ray photoelectron spectroscopy

Indexed keywords

COMPLEX OXIDES; HIGHLY SENSITIVE; INSULATING PHASE; KELVIN FORCE MICROSCOPY; MULTI-VALENCE CATIONS; NEAR-SURFACE; NON-STOICHIOMETRY; ROOM TEMPERATURE; TEMPERATURE TRENDS; VANADIUM DIOXIDE; VANADIUM DIOXIDE THIN FILMS; VANADIUM OXIDE FILMS; VANADIUM OXIDES; VARIABLE TEMPERATURE; WORK FUNCTION CHANGE;

ELECTRONIC PROPERTIES; METAL INSULATOR BOUNDARIES; OXIDE FILMS; OXIDES; PHOTONIC DEVICES; PHOTONS; SEMICONDUCTOR INSULATOR BOUNDARIES; SOLID STATE DEVICES; STOICHIOMETRY; THIN FILMS; VANADIUM ALLOYS; VANADIUM COMPOUNDS; WORK FUNCTION; X RAY PHOTOELECTRON SPECTROSCOPY;

METAL INSULATOR TRANSITION;

METAL; OXIDE; VANADIUM DERIVATIVE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; PHASE TRANSITION; SURFACE PROPERTY; TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY;

METALS; MICROSCOPY, ATOMIC FORCE; OXIDES; PHASE TRANSITION; PHOTOELECTRON SPECTROSCOPY; SURFACE PROPERTIES; TEMPERATURE; VANADIUM COMPOUNDS;

EID: 84862954086     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am2006299     Document Type: Article

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