Fabrication and temperature-dependent field-emission properties of bundlelike VO2 nanostructures

ACS Applied Materials and Interfaces

Volumn 3, Issue 6, 2011, Pages 2057-2062

  Yin, Haihong ^a   Luo, Min ^a   Yu, Ke ^a   Gao, Yanfeng ^b   Huang, Rong ^a   Zhang, Zhengli ^a   Zeng, Min ^a   Cao, Chuanxiang ^b   Zhu, Ziqiang ^a  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

Density of states; Field emission; Vanadium dioxide

Indexed keywords

CANDIDATE MATERIALS; CRYSTALLINITIES; DENSITY OF STATE; DENSITY-FUNCTIONAL THEORY CALCULATIONS; EMISSION CURRENT DENSITY; EMISSION DENSITY; FE PROPERTIES; FIELD EMITTER; FIELD-EMISSION PROPERTIES; HEAT-TREATMENT PROCESS; HYDROTHERMAL METHODS; INSULATING PHASE; SELF-ASSEMBLED; STRUCTURAL CHARACTERIZATION; TEMPERATURE DEPENDENT; TEMPERATURE-INDUCED; VANADIUM DIOXIDE; WORK FUNCTION MEASUREMENTS;

METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; NANOWIRES; SEMICONDUCTOR INSULATOR BOUNDARIES; TEMPERATURE; VANADIUM; WORK FUNCTION;

DENSITY FUNCTIONAL THEORY;

EID: 84864912291     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am200291a     Document Type: Article

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