Theory of interfacial plasmon-phonon scattering in supported graphene

Physical Review B - Condensed Matter and Materials Physics

Volumn 86, Issue 16, 2012, Pages

  Ong, Zhun Yong ^a   Fischetti, Massimo V ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84867559842     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.86.165422     Document Type: Article

References (54)

1. K. Novoselov, A. Geim, S. Morozov, D. Jiang, M. Grigorieva, S. Dubonos, and A. Firsov, Nature (London) NATUAS 0028-0836 10.1038/nature04233 438, 197 (2005).
2. E. H. Hwang, S. Adam, and S. Das Sarma, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.98.186806 98, 186806 (2007).
3. A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, and C. Lau, Nano Lett. NALEFD 1530-6984 10.1021/nl0731872 8, 902 (2008).
4. K. Bolotin, K. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, and H. Stormer, Solid State Commun. SSCOA4 0038-1098 10.1016/j.ssc.2008.02.024 146, 351 (2008).
5. Zhun-Yong Ong and Massimo V. Fischetti, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.86.121409 86, 121409(R) (2012).
6. M. Lemme, T. Echtermeyer, M. Baus, B. Szafranek, J. Bolten, M. Schmidt, T. Wahlbrink, and H. Kurz, Solid-State Electron. SSELA5 0038-1101 10.1016/j.sse.2007.10.054 52, 514 (2008).
7. J. Moon, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2010. 2040132 31, 260 (2010).
8. J. Pezoldt, C. Hummel, A. Hanisch, I. Hotovy, M. Kadlecikova, and F. Schwierz, Phys. Status Solidi C 1610-1634 10.1002/pssc.200982440 7, 390 (2010).
9. M. V. Fischetti, D. A. Neumayer, and E. A. Cartier, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1405826 90, 4587 (2001).
10. R. Fuchs and K. L. Kliewer, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.140.A2076 140, A2076 (1965).
11. K. Hess and P. Vogl, Solid State Commun. SSCOA4 0038-1098 10.1016/0038-1098(79)90051-6 30, 797 (1979).
12. T. O'Regan and M. Fischetti, J. Comput. Electron. 1569-8025 10.1007/s10825-006-0072-z 6, 81 (2007).
13. K. Xiu, in Simulation of Semiconductor Processes and Devices (SISPAD), 2011 International Conference (IEEE, New York, 2011), pp. 35-38.
14. C. Dean, Nat. Nanotechnology 1748-3387 10.1038/nnano.2010.172 5, 722 (2010).
15. J. Chen, C. Jang, S. Xiao, M. Ishigami, and M. Fuhrer, Nat. Nanotechnology 1748-3387 10.1038/nnano.2008.58 3, 206 (2008).
16. V. E. Dorgan, M.-H. Bae, and E. Pop, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3483130 97, 082112 (2010).
17. J. Robinson, Nano Lett. NALEFD 1530-6984 10.1021/nl901073g 9, 2873 (2009).
18. P. Sutter, Nat. Mater. 1476-1122 10.1038/nmat2392 8, 171 (2009).
19. S. Fratini and F. Guinea, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.77.195415 77, 195415 (2008).
20. S. Rotkin, V. Perebeinos, A. Petrov, and P. Avouris, Nano Lett. NALEFD 1530-6984 10.1021/nl803835z 9, 1850 (2009).
21. V. Perebeinos, S. Rotkin, A. Petrov, and P. Avouris, Nano Lett. NALEFD 1530-6984 10.1021/nl8030086 9, 312 (2008).
22. A. Konar, T. Fang, and D. Jena, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.82.115452 82, 115452 (2010).
23. J. K. Viljas and T. T. Heikkilä, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.81.245404 81, 245404 (2010).
24. X. Li, E. Barry, J. Zavada, M. Nardelli, and K. Kim, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3525606 97, 232105 (2010).
25. S. Adam, E. Hwang, E. Rossi, and S. Das Sarma, Solid State Commun. SSCOA4 0038-1098 10.1016/j.ssc.2009.02.041 149, 1072 (2009).
26. S. Adam, E. H. Hwang, V. M. Galitski, and S. Das Sarma, Proc. Natl. Acad. Sci. USA PNASA6 0027-8424 10.1073/pnas.0704772104 104, 18392 (2007).
27. M. Lazzeri and F. Mauri, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.97.266407 97, 266407 (2006).
28. S. Pisana, M. Lazzeri, C. Casiraghi, K. Novoselov, A. Geim, A. Ferrari, and F. Mauri, Nat. Mater. 1476-1122 10.1038/nmat1846 6, 198 (2007).
29. B. K. Ridley, Quantum Processes in Semiconductors (Oxford University Press, Oxford, 1999).
30. V. Perebeinos and P. Avouris, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.81.195442 81, 195442 (2010).
31. Y. Liu, R. F. Willis, K. V. Emtsev, and T. Seyller, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.78.201403 78, 201403 (2008).
32. Y. Liu and R. F. Willis, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.81.081406 81, 081406 (2010).
33. Z. Fei, Nano Lett. 1530-6984 10.1021/nl202362d 11, 4701 (2011).
34. R. J. Koch, T. Seyller, and J. A. Schaefer, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.82.201413 82, 201413 (2010).
35. J. D. Jackson, Classical Electrodynamics (Wiley, New York, 1999).
36. M. E. Kim, A. Das, and S. D. Senturia, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.18.6890 18, 6890 (1978).
37. E. H. Hwang and S. Das Sarma, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.75.205418 75, 205418 (2007).
38. B. Wunsch, T. Stauber, F. Sols, and F. Guinea, New J. Phys. NJOPFM 1367-2630 10.1088/1367-2630/8/12/318 8, 318 (2006).
39. K. Zou, X. Hong, D. Keefer, and J. Zhu, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.105.126601 105, 126601 (2010).
40. E. H. Hwang, R. Sensarma, and S. Das Sarma, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.82.195406 82, 195406 (2010).
41. R. S. Shishir and D. K. Ferry, J. Phys.: Condens. Matter 0953-8984 10.1088/0953-8984/21/23/232204 21, 232204 (2009).
42. Y. W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.99.246803 99, 246803 (2007).
43. C. Jang, S. Adam, J. H. Chen, E. D. Williams, S. Das Sarma, and M. S. Fuhrer, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.101.146805 101, 146805 (2008).
44. L. A. Ponomarenko, R. Yang, T. M. Mohiuddin, M. I. Katsnelson, K. S. Novoselov, S. V. Morozov, A. A. Zhukov, F. Schedin, E. W. Hill, and A. K. Geim, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.102.206603 102, 206603 (2009).
45. N. Garces, V. Wheeler, J. Hite, G. Jernigan, J. Tedesco, N. Nepal, C. Eddy, and D. Gaskill, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3596761 109, 124304 (2011).
46. G. Gilat and L. Raubenheimer, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.144.390 144, 390 (1966).
47. B. Fallahazad, S. Kim, L. Colombo, and E. Tutuc, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3492843 97, 123105 (2010).
48. S. Jandhyala, G. Mordi, B. Lee, G. Lee, C. Floresca, P.-R. Cha, J. Ahn, R. M. Wallace, Y. J. Chabal, M. J. Kim, L. Colombo, K. Cho, and J. Kim, ACS Nano 1936-0851 10.1021/nn300167t 6, 2722 (2012).
49. Z. Ren, M. V. Fischetti, E. P. Gusev, E. A. Cartier, and M. Chudzik, in Electron Devices Meeting, 2003. IEDM'03 Technical Digest (IEEE, New York, 2003), pp. 33.2.1-33.2.4.
50. S. Das Sarma, J. K. Jain, and R. Jalabert, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.37.6290 37, 6290 (1988).
51. W. Zhu, V. Perebeinos, M. Freitag, and P. Avouris, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.80.235402 80, 235402 (2009).
52. X. Li, Science SCIEAS 0036-8075 10.1126/science.1171245 324, 1312 (2009).
53. V. Krishan and R. H. Ritchie, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.24.1117 24, 1117 (1970).
54. S. Adam, S. Jung, N. N. Klimov, N. B. Zhitenev, J. A. Stroscio, and M. D. Stiles, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.84.235421 84, 235421 (2011).