Simulation of channel electron mobility due to scattering with interfacial phonon-plasmon modes in silicon nanowire under the presence of high-k oxide and metal gate

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2011, Pages 35-38

  Xiu, Kai ^a  

^a IBM RESEARCH   (United States)

Author keywords

dielectrics; dynamic screening; high k; HKMG; metal gate; mobility; plasmon; silicon; silicon nanowire; soft phonon

Indexed keywords

DYNAMIC SCREENING; HIGH-K; HKMG; METAL GATE; SILICON NANOWIRE; SOFT PHONON;

DIELECTRIC MATERIALS; ELECTRIC WIRE; ELECTRON MOBILITY; METALS; NANOWIRES; PHONONS; PLASMONS; POLYSILICON; SCATTERING; SEMICONDUCTING SILICON;

GATE DIELECTRICS;

EID: 80054997186     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2011.6035043     Document Type: Conference Paper

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