Top gated graphene transistors with different gate insulators

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 2, 2010, Pages 390-393

  Pezoldt, Jörg ^a   Hummel, Christian ^a   Hanisch, Antonia ^a   Hotovy, Ivan ^b   Kadlecikova, Magdalena ^b   Schwierz, Frank ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; BACK GATES; BACK- AND TOP-GATE; BOND FORMATION; CARRIER DENSITY; CHANNEL CARRIER DENSITY; DEFECT FORMATION; DEFECT PASSIVATION; GATE INSULATOR; GRAPHENE SHEETS; GRAPHENE TRANSISTORS; KLEIN PARADOX; OUTPUT CHARACTERISTICS; PLASMA ASSISTED DEPOSITION; TOP GATE; TRAP DENSITY;

CARRIER CONCENTRATION; DEFECTS; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHITE; NANOSCIENCE; PASSIVATION; PLASMA DEPOSITION;

CARRIER MOBILITY;

EID: 77954335423     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982440     Document Type: Conference Paper

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