Grain control in directional solidification of photovoltaic silicon

Journal of Crystal Growth

Volumn 360, Issue 1, 2012, Pages 68-75

  Lan, C W ^a   Lan, W C ^b   Lee, T F ^a   Yu, A ^b   Yang, Y M ^b   Hsu, W C ^b   Hsu, B ^b   Yang, A ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Sino American Silicon Productions Inc   (Taiwan)

^c Solartech Energy Inc   (Taiwan)

Author keywords

A1. Directional solidification; A3. Grain Growth; B2. Semiconducting Materials; B2. Semiconducting silicon; B3. Solar cells

Indexed keywords

CRYSTAL QUALITIES; GRAIN SIZE; GROWTH FRONT; INDUSTRIAL-SCALE EXPERIMENT; MULTI-CRYSTALLINE SILICON; PHOTOVOLTAIC; PHOTOVOLTAIC INDUSTRY; SEEDED GROWTH; SEMICONDUCTING MATERIALS; SOLAR CELL EFFICIENCIES; TWIN BOUNDARIES;

CONVERSION EFFICIENCY; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; NANOSTRUCTURED MATERIALS; SILICON; SILICON WAFERS; SOLAR CELLS; SOLIDIFICATION; UNDERCOOLING;

GRAIN GROWTH;

EID: 84867525712     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.01.007     Document Type: Conference Paper

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