Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

Scripta Materialia

Volumn 52, Issue 12, 2005, Pages 1211-1215

  Chen, J ^a,b   Sekiguchi, T ^a   Xie, R ^a,b   Ahmet, P ^a   Chikyo, T ^a   Yang, D ^b   Ito, S ^c   Yin, F ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b ZHEJIANG UNIVERSITY   (China)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

EBIC; EBSD; Elemental semiconductor; Grain boundary defects

Indexed keywords

BACKSCATTERING; ELECTRIC PROPERTIES; ELECTRON BEAMS; INDUCED CURRENTS; SILICON; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION DENSITY; ELECTRON-BEAM-INDUCED CURRENT (EBIC) TECHNIQUES; PARALLEL EDGE DISLOCATIONS; SMALL-ANGLE GRAIN BOUNDARIES (SA GB);

GRAIN BOUNDARIES;

EID: 16344370256     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2005.03.010     Document Type: Article

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