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Volumn 52, Issue 12, 2005, Pages 1211-1215

Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

Author keywords

EBIC; EBSD; Elemental semiconductor; Grain boundary defects

Indexed keywords

BACKSCATTERING; ELECTRIC PROPERTIES; ELECTRON BEAMS; INDUCED CURRENTS; SILICON; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 16344370256     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2005.03.010     Document Type: Article
Times cited : (105)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.