![]() |
Volumn 52, Issue 12, 2005, Pages 1211-1215
|
Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon
|
Author keywords
EBIC; EBSD; Elemental semiconductor; Grain boundary defects
|
Indexed keywords
BACKSCATTERING;
ELECTRIC PROPERTIES;
ELECTRON BEAMS;
INDUCED CURRENTS;
SILICON;
TRANSITION METALS;
TRANSMISSION ELECTRON MICROSCOPY;
DISLOCATION DENSITY;
ELECTRON-BEAM-INDUCED CURRENT (EBIC) TECHNIQUES;
PARALLEL EDGE DISLOCATIONS;
SMALL-ANGLE GRAIN BOUNDARIES (SA GB);
GRAIN BOUNDARIES;
|
EID: 16344370256
PISSN: 13596462
EISSN: None
Source Type: Journal
DOI: 10.1016/j.scriptamat.2005.03.010 Document Type: Article |
Times cited : (105)
|
References (22)
|