Crystallization of supercooled silicon droplets initiated through small silicon nitride particles

Journal of Crystal Growth

Volumn 311, Issue 5, 2009, Pages 1250-1255

  Alphei, L ^a   Braun, A ^a   Becker, V ^a   Feldhoff, A ^a   Becker, J A ^a   Wulf, E ^a   Krause, C ^a   Bach, Fr W ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

A1. Nanostructures; A1. Solidification; A2. Growth from melts; B1. Nitrides

Indexed keywords

CORUNDUM; CRYSTALLIZATION; DROP FORMATION; MELTING POINT; NANOSTRUCTURES; NONMETALS; SILICON NITRIDE; SINGLE CRYSTALS; SOLIDIFICATION; SUPERCOOLING;

A1. NANOSTRUCTURES; A1. SOLIDIFICATION; A2. GROWTH FROM MELTS; AMORPHOUS SILICON NITRIDES; B1. NITRIDES; CMOS CAMERAS; CRYSTALLINE SILICON NITRIDES; MICROSCOPIC STUDIES; NITRIDE PARTICLES; NUCLEATION SEEDS; POLYCRYSTALLINE SOLIDIFICATIONS; PURE SILICONS; SILICON MELTS; SMALL DROPLETS;

AMORPHOUS SILICON;

EID: 61649119715     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.12.052     Document Type: Article

References (29)

1. Omae S., Minemoto T., Murozono M., Takakura H., and Hamakawa Y. Jpn. J. Appl. Phys. 45 (2006) 3577
2. Minemoto T., Okamoto C., Omae S., Murozono M., Takakura H., and Hamakawa Y. Jpn. J. Appl. Phys. 44 (2005) 4820
3. McKee W.R. IEEE Trans. Components Hybrids Manuf. Technol. 5 (1982) 336
4. Aoyama T., and Kuribayashi K. Acta Materialia 48 (2000) 3739
5. Beatty K.M., and Jackson K.A. J. Crystal Growth 211 (2000) 13
6. Takasuka E., Tokizaki E., Terashima K., and Kimura A. J. Appl. Phys. 81 (1997) 6384
7. Nagashio K., Okamoto H., Ando H., Kuribayashi K., and Jimbo I. Jpn. J. Appl. Phys. 45 (2006) L623
8. Liu Z., Nagai T., Masuda A., and Kondo M. J. Appl. Phys. 101 (2007) 093505
9. Liu Z., Asai K., Masuda A., Nagai T., Akashi Y., Murozono M., and Kondo M. Jpn. J. Appl. Phys. 46 (2007) 5695
10. Greer A.L., Cooper R.S., Meredith M.W., Schneider W., Schumacher P., Spittle J.A., and Tronche A. Adv. Eng. Mater. 5 (2003) 81
11. Fredriksson H., and Akerlind U. Materials Processing and Casting (2006), Wiley, Chichester pp. 141-143
12. Maxwell I., and Hellawell A. Acta Metall. 23 (1975) 229
13. Meyer C., Luepke G., Emmrichs U., Wolter F., Kurz H., and Bjorkmann C.H. Phys. Rev. Lett. 74 (1995) 3001
14. Stesmanns A., and Van Gorp G. Phys. Rev. B 52 (1995) 8904
15. Wang X.S., Zhai G., Yang J., and Cue N. Phys. Rev. B 60 (1999) R2146
16. Bachlechner M.E., Srivastava D., Owens E.T., Schiffbauer J., Anderson J.T., Burky M.R., Ducatman S.C., Gripper A.M., Guffey E.J., and Ramos F.S. Phys. Rev. B 74 (2006) 075327
17. Kim J.W., and Yeom H.W. Phys. Rev. B 67 (2003) 035304
18. Cröll A., Lantzsch R., Kitanov S., Salk N., Szofran F.R., and Tegetmeier A. Cryst. Res. Technol. 38 (2003) 669
19. Riley F.L. J. Am. Ceram. Soc. 83 (2000) 245
20. Fitzer E., and Kegel B. Carbon 6 (1968) 433
21. Weisweiler M., and Mahadevan V. High Temp. High Press. 3 (1971) 111
22. Szepvolgyi J., and Mohai I. Ceram. Int. 25 (1999) 711
23. Allaire F., and Langois R. J. Mat. Sci. 27 (1992) 1255
24. Brink R., and Lange H. Key Eng. Mat. 89 (1994) 73
25. Tsuruta K., Omelchenko A., Kalia R.K., and Vashishta P. Europhys. Lett. 33 (1996) 441
26. Bachlechner M.E., Zhang J., Wang Y., Schiffbauer J., Knudsen S.R., and Korakakis D. Phys. Rev. B 72 (2005) 094115
27. Li D., and Herlach D.M. Europhys. Lett. 34 (1996) 423
28. Liu P.P., Volkmann T., and Herlach D. Acta Mater. 49 (2001) 439
29. Huang X., Uda S., Tanabe H., Kitahara N., Arimune H., and Hoshikawa K. J. Crystal Growth 307 (2007) 341